A Physical-Based Device Model for Ferroelectric High Electron Mobility Transistor

We present a compact, physics-based model for ferroelectric high-electron-mobility transistors (FE-HEMTs) that self-consistently couples multi-domain ferroelectric polarization dynamics, governed by the Landau–Khalatnikov framework, with a virtual-source transport model for high-electron-mobility transistor channel. The model captures both negative capacitance transistor characteristics and ferroelectric memory switching device characteristics, enabling quantitative simulation of voltage amplification, memory hysteresis, and transconductance enhancement. The model can accurately describe experimental I-V characteristics and predict device characteristics and performance under different device design parameter values and ferroelectric configurations. Access resistance and self-heating effects are incorporated to reflect realistic thermal and transport behavior. This unified compact framework provides a computationally efficient tool for exploring and optimizing FE-HEMTs in logic, analog, and nonvolatile memory applications.