Design, Simulation, and Fabrication of Thin-Film RadFET and SPND Neutron Detectors Using Gd, B, and Y₂O₃ Layers

In this study, an innovative approach to neutron detection is proposed through the development of Radiation Field-Effect Transistor (RadFET) and Self-Powered Neutron Detector (SPND) devices utilizing gadolinium (¹⁵⁷Gd), boron (¹⁰B), and yttrium(III) oxide (Y₂O₃) materials. Both detector types are designed by integrating ¹⁵⁷Gd and 10B elements, which possess high neutron capture cross-sections, together with Y₂O₃, a compound that provides excellent insulation and enhances neutron–gamma conversion efficiency. These materials are fabricated in thin-film form to improve the performance of existing detector structures. The integration of such materials through thin-film technology introduces a novel strategy aimed at overcoming current limitations in sensitivity, stability, and energy response of conventional neutron detectors. The structural and electrical properties of ¹⁵⁷Gd, ¹⁰B, and Y₂O₃, as well as their interaction behavior with neutrons, were evaluated to assign specific functional roles within each detector configuration. The design and optimization processes were carried out using the Geant4 simulation software for RadFETs and OpenMC for SPNDs to determine the optimal layer thicknesses. The simulation outcomes were subsequently validated by comparing them with experimental data. The developed detector systems are designed not only for neutron flux and leakage detection in nuclear reactors but also for use in particle physics experiments, radiotherapy applications, defense technologies, and space research involving advanced radiation measurement systems. This multi-disciplinary applicability highlights their potential contribution to next-generation neutron detection and nuclear safety technologies.