Electronic structure and Schottky-barrier height of Si/PtSi interface

ORAL

Abstract

With the use of silicides in CMOS devices, the sheet and contact resistances in source/drain regions are greatly reduced, which eventually causes the device speed increase. However, for the ultra-scaled devices, the serial contact resistance coming from relatively high Schottky-barrier between Si in the source/drain regions and the metallic contact is expected to amount to one-fourth of the total parasitic resistance. This contribution will clearly only rise as the scaling continues. Over the past two decades, Titanium disilicide (TiSi$_{2})$ has become the preferred silicide in integrated circuit manufacturing. However, the sheet resistance of TiSi$_{2}$ increases significantly as one of the device dimensions is reduced. In deep submicron regime, PtSi and NiSi have been shown to be prospective candidates for replacing conventional silicides. PtSi has relatively low Schottky-barrier on Si (001) and its structural and electronic properties are less sensitive to lateral dimensions. We have performed density functional calculations of work functions and surface energies of PtSi for different surface orientations and calculated Schottky-barrier height of Si/PtSi interface. We have also studied the effects of Boron doping in PtSi on its electronic structure and Si/PtSi Schottky-barrier. Our results are consistent with the existing experimental results. Finally, we discuss how Boron doping in PtSi may improve its metallic character and influence Si/PtSi Schottky-barrier height.

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Authors

  • Manish Niranjan

  • Nilanjan Das

    Dept. of Physics, ESFM-IPN, Mexico City, Dept. of Physics, The University of Texas at El Paso, Texas A\&M University, Southeast Missouri State University, Departamento de Fisica, FCEN, Universidad de Buenos Aires, Nunez, Argentina, Cyclotron Institute, Texas A\&M University, University of Houston, Denison U., Advanced Space Propulsion Laboratory, AdAstra Rocket Company, Texas Tech University, Department of Chemistry and Biochemistry, Texas State Unv. - San Marcos, Department of Physics, Texas State Unv. - San Marcos, Rice U., Texas State University - San Marcos, Freescale Semiconductor, Inc., Varian Semiconductor Equipment Associates, Gloucester, MA, University of North Texas, Denton, TX, National Insitute of Standards \& Technology, Gaithersburg, MD, James Madison University, Harrisonburg, VA, Texas A\&M University, College Station, TX, Hong Kong University of Science and Technology; Texas Center for Superconductivity and Advanced Materials, University of Houston, Texas Center for Superconductivity at the University of Houston, University of Houston, University of Idaho, Department of Physics, Istanbul Technical University, University of California at Davis, Physics Department, University of South Florida, FL 33620, Physics Department, Texas A\&M University, TX 77843, Center for Studies in Statistical Mechanics and Complex Systems, The University of Texas at Austin, Rice University, TcSUH, University of Houston, Lawrence Berkeley National Laboratory, Hong Kong University of Science and Technology, Institute of Solid State Physics, Bulgarian Academy of Sciences, Hong Kong University of Science and Technology; Texas Center for Superconductivity, University of Houston; Lawrence Berkeley National Laboratory, Texas Center for Superconductivity, University of Houston

  • Nilanjan Das

    Dept. of Physics, ESFM-IPN, Mexico City, Dept. of Physics, The University of Texas at El Paso, Texas A\&M University, Southeast Missouri State University, Departamento de Fisica, FCEN, Universidad de Buenos Aires, Nunez, Argentina, Cyclotron Institute, Texas A\&M University, University of Houston, Denison U., Advanced Space Propulsion Laboratory, AdAstra Rocket Company, Texas Tech University, Department of Chemistry and Biochemistry, Texas State Unv. - San Marcos, Department of Physics, Texas State Unv. - San Marcos, Rice U., Texas State University - San Marcos, Freescale Semiconductor, Inc., Varian Semiconductor Equipment Associates, Gloucester, MA, University of North Texas, Denton, TX, National Insitute of Standards \& Technology, Gaithersburg, MD, James Madison University, Harrisonburg, VA, Texas A\&M University, College Station, TX, Hong Kong University of Science and Technology; Texas Center for Superconductivity and Advanced Materials, University of Houston, Texas Center for Superconductivity at the University of Houston, University of Houston, University of Idaho, Department of Physics, Istanbul Technical University, University of California at Davis, Physics Department, University of South Florida, FL 33620, Physics Department, Texas A\&M University, TX 77843, Center for Studies in Statistical Mechanics and Complex Systems, The University of Texas at Austin, Rice University, TcSUH, University of Houston, Lawrence Berkeley National Laboratory, Hong Kong University of Science and Technology, Institute of Solid State Physics, Bulgarian Academy of Sciences, Hong Kong University of Science and Technology; Texas Center for Superconductivity, University of Houston; Lawrence Berkeley National Laboratory, Texas Center for Superconductivity, University of Houston

  • Nilanjan Das

    Dept. of Physics, ESFM-IPN, Mexico City, Dept. of Physics, The University of Texas at El Paso, Texas A\&M University, Southeast Missouri State University, Departamento de Fisica, FCEN, Universidad de Buenos Aires, Nunez, Argentina, Cyclotron Institute, Texas A\&M University, University of Houston, Denison U., Advanced Space Propulsion Laboratory, AdAstra Rocket Company, Texas Tech University, Department of Chemistry and Biochemistry, Texas State Unv. - San Marcos, Department of Physics, Texas State Unv. - San Marcos, Rice U., Texas State University - San Marcos, Freescale Semiconductor, Inc., Varian Semiconductor Equipment Associates, Gloucester, MA, University of North Texas, Denton, TX, National Insitute of Standards \& Technology, Gaithersburg, MD, James Madison University, Harrisonburg, VA, Texas A\&M University, College Station, TX, Hong Kong University of Science and Technology; Texas Center for Superconductivity and Advanced Materials, University of Houston, Texas Center for Superconductivity at the University of Houston, University of Houston, University of Idaho, Department of Physics, Istanbul Technical University, University of California at Davis, Physics Department, University of South Florida, FL 33620, Physics Department, Texas A\&M University, TX 77843, Center for Studies in Statistical Mechanics and Complex Systems, The University of Texas at Austin, Rice University, TcSUH, University of Houston, Lawrence Berkeley National Laboratory, Hong Kong University of Science and Technology, Institute of Solid State Physics, Bulgarian Academy of Sciences, Hong Kong University of Science and Technology; Texas Center for Superconductivity, University of Houston; Lawrence Berkeley National Laboratory, Texas Center for Superconductivity, University of Houston