Unusually High Beryllium Diffusion in GaAs$_{1-x}$N$_{x}$(x$<<$0.01)

In this study, Beryllium diffusion in nitrogen doped gallium arsenide GaAs$_{1-x}$N$_{x}$ (x$<<$0.01) epilayers have been investigated for Be concentrations ranging from 5x10$^{17}$cm$^{-3}$ to 5x10$^{19}$cm$^{-3}$. Post thermal annealings are implemented to extract the temperature dependence of diffusion profiles. Be and carrier concentration profiles are extracted using secondary ion mass spectroscopy and electrochemical capacitance voltage measurements respectively. Diffusivities are extracted by fitting experimental profiles using a model derived from Fick's diffusion law. The study reveals an abnormally high Beryllium diffusivities exceeding by one to two order of magnitudes those encountered in GaAs and a significant reduction of diffusion activation energies 0.5 eV.