The effects of vacuum annealing on the surface of 6H- SiC studied using Positron Annihilation induced Auger Electron Spectroscopy

The effects of vacuum annealing on the surface of 6H- SiC surface has been studied by Time of Flight --Positron Annihilation induced Auger Electron Spectroscopy (TOF-PAES). Meas urements were performed using a time of flight PAES spectrometer that was capable of moni toring the top layer surface concentrations of C, O and Si. The results indicate that the SiC surface was initially covered with a layer containing oxygen but largely devoid of Si which was subsequently removed as a result of vacuum annealing to expose Si and C in the top layer. The study was the first application of a TOF-PAES spectrometer to the SiC surface and clearly demonstrated the utility of PAES in the study of the surface modification of SiC.