Raman Mapping of Stress Distribution in Diamond Composites

POSTER

Abstract

Mapping of residual stress in diamond-SiC composites, sintered by liquid silicon infiltration, was obtained by analyzing splitting of Raman peak of diamond. Under biaxial strain this peak splits and its components shift toward higher (compressive) or lower frequencies (tensile strain). The magnitudes of the shifts can be used to estimate residual stress. Using a confocal Raman microscope we obtained spectra from areas less than 1 micron in diameter and thus acquired information on stress distribution within diamond crystals. Only shifts corresponding to compressive strains were detected. For the samples sintered at 10 GPa stress increased with increasing sintering temperature reaching a maximum value of 3.2 GPa. Largest concentrations of strains were found on diamond surfaces in direct contact with other diamonds. We explain these results in terms of different thermal expansion coefficients of silicon and diamond phases. Although during the early stages of the infiltration diamonds were under hydrostatic conditions, later after SiC was formed and the system cooled down, due to different thermal expansion coefficients SiC contracted more than diamond and thus exerted compressive forces.

Authors

  • Dana Dunn

    University of Texas at Arlington, Peoples Friendship University of the Russia, TSAAPT Officer, University of Texas at El Paso, Department of Chemistry, Stephen F. Austin University, Department of Physics, Stephen F. Austin University, Highland Park High School, Dallas, Texas, Lamar High School, Arlington, Texas, Angelo State University, Abilene Christian University, Southern Nazarene University, Texas Tech University, Sam Houston State University, University of Texas at Austin, Cornell University, University of Houston, University of Texas Center for Relativity, Ion Beam Modification and Analysis Laboratory (IBMAL), University of North Texas, University of North Texas, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, NanoTech Institute, University of Texas at Dallas, Richardson, TX 75083, Department of Physics, The University of Texas at Arlington, Arlington, Texas 76019, Department of Physics, University of Texas at Arlington, Arlington, TX, 76019, UTA High Energy Physics Group, Univ. of Texas, Arlington, USA, KAERI Korea, Changwon National Univ., Korea, Rutgers University, Iowa State University, Rigaku/MSC, Texas Christian University, Dept. of Physics, Changwon National University, Department of Physics, University of North Texas, Department of Chemistry and Biochemistry, Arizona State University, Research Center, Philip Morris USA, Harrington Department Bioengineering Arizona State University, Universidad Autonoma de Colima, Universidad de Buenos Aires, Department of Physics, University of Texas, Arlington, Chair, Department of Physics, University of Texas at Arlington, Dean of Science, University of Texas at Arlington, President, University of Texas at Arlington, Department of Electrical Engineering, Princeton University, Department of Physics, Texas A\&M University, NanoFAB Center and Electrical Engineering Department, University of Texas at Arlington, University of Texas at San Antonio, SEMATECH, University of Texas at Dallas, CINVESTAV Queretaro, Mexico and University of Texas at Dallas, Texas A\&M University, Departamento de F\'isica, FCEN, Universidad de Buenos Aires, Freescale Semiconductor, Inc., Department of Physics, UT Austin, Physics Department, The University of Texas at Arlington, Department of Physics, University of Texas at Arlington, Tolar High School, Granbury High School

  • Dana Dunn

    University of Texas at Arlington, Peoples Friendship University of the Russia, TSAAPT Officer, University of Texas at El Paso, Department of Chemistry, Stephen F. Austin University, Department of Physics, Stephen F. Austin University, Highland Park High School, Dallas, Texas, Lamar High School, Arlington, Texas, Angelo State University, Abilene Christian University, Southern Nazarene University, Texas Tech University, Sam Houston State University, University of Texas at Austin, Cornell University, University of Houston, University of Texas Center for Relativity, Ion Beam Modification and Analysis Laboratory (IBMAL), University of North Texas, University of North Texas, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, NanoTech Institute, University of Texas at Dallas, Richardson, TX 75083, Department of Physics, The University of Texas at Arlington, Arlington, Texas 76019, Department of Physics, University of Texas at Arlington, Arlington, TX, 76019, UTA High Energy Physics Group, Univ. of Texas, Arlington, USA, KAERI Korea, Changwon National Univ., Korea, Rutgers University, Iowa State University, Rigaku/MSC, Texas Christian University, Dept. of Physics, Changwon National University, Department of Physics, University of North Texas, Department of Chemistry and Biochemistry, Arizona State University, Research Center, Philip Morris USA, Harrington Department Bioengineering Arizona State University, Universidad Autonoma de Colima, Universidad de Buenos Aires, Department of Physics, University of Texas, Arlington, Chair, Department of Physics, University of Texas at Arlington, Dean of Science, University of Texas at Arlington, President, University of Texas at Arlington, Department of Electrical Engineering, Princeton University, Department of Physics, Texas A\&M University, NanoFAB Center and Electrical Engineering Department, University of Texas at Arlington, University of Texas at San Antonio, SEMATECH, University of Texas at Dallas, CINVESTAV Queretaro, Mexico and University of Texas at Dallas, Texas A\&M University, Departamento de F\'isica, FCEN, Universidad de Buenos Aires, Freescale Semiconductor, Inc., Department of Physics, UT Austin, Physics Department, The University of Texas at Arlington, Department of Physics, University of Texas at Arlington, Tolar High School, Granbury High School