Interaction between silicon and thin films of hafnium oxide

ORAL

Abstract

Thin films (20 {\AA}) of hafnium were deposited on silicon substrates at base pressure of high 10$^{-9}$ Torr. The substrate temperature was kept at 100, 200, 300, 400, 500, and 600\r{ }C during deposition. The interfaces thus formed were analyzed \textit{in situ} by the technique of x-ray photoelectron spectroscopy using Mg anode as the source of excitation. The hafnium 4f, silicon 2p and oxygen 1s core level regions were investigated. The spectral data were obtained at various take-off angles to investigate the reactivity at various depths. The spectral data show that hafnium gets deposited as HfO$_{2}$. As the substrate temperature is increased, changes in the hafnium and oxygen core regions were observed. The data show that HfO$_{2}$ gets reduced either to elemental hafnium or to hafnium-suboxide as the substrate temperature is increased. No spectral changes were observed in the silicon core region indicating no chemical reactivity between HfO$_{2}$ and silicon till at least 600\r{ }C.

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Authors

  • John Hickman

    Dept. of Physics, Texas A\&M University-Commerce

  • Edward Fry

    Institute for Astronomy, ETH, National Optical Astronomy Observatory, Department of Physics, ETH, Texas A&M University, LANL, American Physical Society, Society of Physics Students National Office, Texas Tech University, University of Texas, Universite d'Orleans, Steward Observatory, University of Arizona, Texas A\&M University-Commerce, Texas A\&M University, Institute for Quantum Electronics, ETH Zurich, Department of Engineering and Applied Science, Harvard University, Rice University, University of Houston, Bucknell University, Department of Physics, Texas A\&M University, Air Force Research Laboratory, Department of Physics, Texas A\&M University, College Station, TX 77843, Department of Physics and MIC, Texas A\&M University, University of Texas at Arlington, Changwon National University, University of North Texas, Southwestern University, The Pennsylvania State University, University of Dallas, UT Southwestern Medical Center, Naval Air Systems Command, Institute for Quantum Studies and Department of Physics, Texas A\&M University, College Station, TX 77843, The University of Texas at Arlington, TCU, ELTE, National Institute of Chemistry, Ljubljana, Slovenia, Texas Christian University, Fort Worth, TX, Dept. of Physics, Texas A\&M University-Commerce, Univ. of North Texas, Los Alamos National Laboratory, Oswego State University of New York, Lee College, University of Texas at San Antonio, UTSA-Professor, UNT, Sam Houston State University, Sewanee: The University of the South, Director of Education for NSF, Center for Nonlinear Dynamics and Department of Physics, The University of Texas at Austin, Sackler School of Chemistry, Tel-Aviv University, Rice University, Department of Physics and Astronomy, Houston, TX 77005, Center for Nonlinear Dynamics, University of Texas at Austin

  • A.R. Chourasia

    Dept. of Physics, Texas A\&M University-Commerce