Spectroscopic analysis of WO$_{3}$ for sensor applications

Samples of WO$_{3}$ thin films for use in gas sensors were grown using RF magnetron sputtering at a number of different substrate temperatures and Ar:O$_{2}$ pressure ratios. The structural properties of the samples were investigated, both experimentally and theoretically, with the goal of determining how variations in the above preparation parameters effect structural changes in the sensor materials. Such structural changes are of crucial importance to the question of improving the sensitivity, specificity, and durability of WO$_{3}$ based gas sensors. Experimental characterization was performed using the techniques of FT-IR, Raman, AFM, and XRD. The theoretical work involved software simulation techniques using Gaussian 09W$_{\mbox{{\textregistered}}.}$