The Growth and Characterization of PbTe/CdTe at Texas State University

The new Materials Science, Engineering, and Commercialization program at Texas State University (MSEC) has developed a state-of-the-art nine-chamber molecular-beam epitaxy (MBE) growth chamber for semiconductor growth, consisting of II-VI, III-V, and IV-VI compounds. We present the results of heteroepitaxial PbTe/CdTe growth doped with Tl that was characterized through a variety of techniques, including variable-field Hall measurement and quantitative mobility spectrum analysis. We report on the need for consideration of the anisotropy of the conduction and valence bands during analysis. By producing then analyzing these structures, MSEC can work to improve devices such as photodiodes and thermo-electrics for a wide variety of applications.