Positive Muonium in Indium Oxide

Using Muon Spin Relaxation (MuSR) measurements, we are investigating the diffusion of the positively charged ionic state of muonium (muonium is a muon plus a captured electron) defects in In$_{2}$O$_{3}$. The muonium is treated as a light hydrogen analog. Zero field (ZF) measurements were taken from 100 K up to 750 K. This range of temperatures allows for investigation of how the muonium defect center diffuses through the material. The global diffusion barrier energy is being pursued at higher temperatures. In$_{2}$O$_{3}$ is a semiconducting material in the class of transparent conducting oxides (TCO) that are commonly being used in semiconductor optical devices, such as solar cells and LEDs.