Electrical Characterization of Thin Films

NiO samples are being investigated for possible application in Resistive RAM devices (RRAM). RRAM is non-volatile memory technology that is currently being considered to replace Flash memory beyond the 14 nm technology node. The material that is being studied are RF sputtered NiO$_{\mathrm{\thinspace }}$thin films made by reactive sputtering. We also measured resistivity of Al and Pt films and devices. The samples were characterized through four different methods; 2-point probe (2pp), linear 4-point probe (4pp), the Van der Pauw method (VDP) techniques, and by direct measurement on manufactured devices. We acquired measurements using a Keithley 2182A nanovoltmeter, a Keithley 6514 system electrometer, a Keithley 6221 DC and AC current source, and a Keithley 7001 switching system furnished with a Hall card all controlled by a labview program. Some samples were measured at both 298K and 77K by use of a cryostat. The resistivity parallel to the surface has semiconductor-like properties. Measurements were done as a function of the oxygen pressure during deposition. For 60 nm thickness, it was unveiled that the resistivity varied with the oxygen concentration in the sputter gas showing a maximum for 10 percent Oxygen and an average resistivity of 2.47E$+$6 ohms.