Theoretical Modeling of Photoluminescence from InGaAs/GaAs Single Strained Quantum Well

Quantum wells formed with III-V semiconductors are used in a variety of optoelectronic device applications. In order to better understand the emission characteristics of the quantum well system, it is important to have a detailed model that accounts for all the physical parameters that have an effect on electronic transitions in the system. The goal of this work was to employ a simple root-finding function in python to calculate the photoluminescence (PL) emission for an InxGa1-xAs/GaAs strained quantum well heterostructure, with the ultimate goal of introducing the temperature dependence in several parameters to model the PL as a function of temperature. A code has been developed that allowed for varying model parameters to better understand the influence of each parameter on the transition energy. The model compares well with experimental data, which deviates from well-known empirical relationships.