Interfacial stability of RuO2 on HfxSi1-xO2/Si

ORAL

Abstract

Alternative metal-based gate electrodes are currently under consideration as a replacement of Poly-Si gates. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based compounds are potential gate electrode candidates for future metal-oxide-semiconductor (MOS) devices. RuO2, with thickness of 500A were deposited on HfxSi1-xO2/Si structures by DC sputtering. These structures were annealed in flowing N2 atmosphere at temperatures ranging from 800C to 1000C. The thermal stability and interfacial diffusion and reaction of RuO2 on HfxSi1-xO2/Si gate dielectric were investigated using Rutherford Backscattering Spectrometry (RBS) and SEM. An overview of RuO2/ HfxSi1-xO2/Si interface integrity and pinhole formation issues will be presented.

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Authors

  • Kevin Morris

    Stephen F. Austin State University, Texas A\&M University-Commerce, University of Texas at Arlington, Texas A\&M University, University of North Texas, Dept. of Physics, University of Maryland, College Park, Texas A\&M-Commerce, Mississippi State University, Department of Physics and Institute for Quantum Studies, Texas A\&M University, Texas Tech University, Dept. of Materials Science, University of North Texas, Dept. of Chemistry, University of North Texas, Department of Chemistry, University of Wisconsin-Eau Claire, Eau Claire, WI 54702-4004

  • Vaishali Ukirde

    Dept. of Materials Science, University of North Texas

  • Kevin Morris

    Stephen F. Austin State University, Texas A\&M University-Commerce, University of Texas at Arlington, Texas A\&M University, University of North Texas, Dept. of Physics, University of Maryland, College Park, Texas A\&M-Commerce, Mississippi State University, Department of Physics and Institute for Quantum Studies, Texas A\&M University, Texas Tech University, Dept. of Materials Science, University of North Texas, Dept. of Chemistry, University of North Texas, Department of Chemistry, University of Wisconsin-Eau Claire, Eau Claire, WI 54702-4004

  • Kevin Morris

    Stephen F. Austin State University, Texas A\&M University-Commerce, University of Texas at Arlington, Texas A\&M University, University of North Texas, Dept. of Physics, University of Maryland, College Park, Texas A\&M-Commerce, Mississippi State University, Department of Physics and Institute for Quantum Studies, Texas A\&M University, Texas Tech University, Dept. of Materials Science, University of North Texas, Dept. of Chemistry, University of North Texas, Department of Chemistry, University of Wisconsin-Eau Claire, Eau Claire, WI 54702-4004