Deposition mechanism of hydrogenated carbon films by rf (13.56MHz) CH$_{4}$ plasma

Plasma enhanced chemical vapour deposition technique (PECVD) was used to grow diamond-like carbon films. The used deposition system is magnetically confined chamber with parallel electrodes. The results showed that the structure depends strongly on the applied bias voltage. In the range of energy considered the growth of the films was governed by a competition between both chemical and physical processes, with a dominance of physical process (subplantation) above 240 V, the energy at which more than 90{\%} sp$^{3}$ hybridization was obtained.