Temperature-Dependent Interlayer Couplings in Fe$_{3}$Si/FeSi$_{2}$ multilayers prepared by facing targets direct-current sputtering

Fe$_{3}$Si (25 {\AA})/FeSi$_{2}$ (10 {\AA}) multilayers were grown on Si(111) substrates by facing targets direct-current sputtering (FTDCS), and the interlayer coupling induced between the ferromagnetic Fe$_{3}$Si layers were investigated at low temperatures. Antiferromagnetic (AF) coupling at room temperature was gradually weakened with a decrease in the temperature, and it finally became ferromagnetic (F) coupling or non-coupling at temperatures lower than 77 K. A reason for the change in the interlayer coupling should be due to the semiconducting FeSi$_{2}$ interlayers. We consider that the reduction in the carrier concentration with the decrease in the temperature gradually weakened the AF interlayer coupling and finally extinguished it.