Deposition of MgF$_{2}$ thin films by pulsed laser ablation technique

In this paper, we report the successful growth of MgF$_{2}$ thin films on Si and zaffire substrates at room temperature by laser ablation of a pure MgF$_{2}$ target. The irradiations were performed at high vacuum (10$^{-5}$ Pa) using the forth harmonic of a Nd:YAG laser with energy density of about 10 J/cm$^{2}$. Uniform films, with a good adhesion on the substrate were obtained. The average ablation and deposition rates resulted to be 2.2 $\mu $g/pulse and 0.3 {\AA}/pulse, respectively. Different diagnostic techniques were used to characterize the films deposited on Si substrate. Films deposited on zaffire were dedicated to optical characterizations. Mass spectrometry studies of the laser ablated material indicate strong correlation between the partial pressure of the chemical species present in the plume and the residual gas. Present interest in the deposition of MgF$_{2}$ thin films is related to their potential application as protecting coatings in photocathodes.