Preparation of AZO thin films by pulsed laser deposition for all-solid-state ECDs

We prepared Al-doped zinc oxide (AZO) thin films by pulsed laser deposition (PLD) at various oxygen gas pressures, while maintaining the substrate temperature at room temperature. We investigated the optical, structural, and electrical properties of the films as a function of the oxygen gas pressures. High quality AZO thin films with low electrical resistivity of 7 $\times$ 10$^{-4} \quad \Omega \cdot $cm and high optical transmittance of over 80{\%} in the visible region are deposited on a glass substrate at room temperature under oxygen gas pressure of 1 Pa.