Kinetics of Electrons in $Ar/BF_3$ Mixtures

In this work we present electron transport coefficients in $Ar/BF_3$ mixtures for the conditions used in plasma assisted technologies for semiconductor production. Transport coefficients are used as the basis for a global model in $Ar/BF_3$ mixtures. We have used a two term numerical solution of the Boltzmann equation and also performed exact calculations using a Monte Carlo simulation. We have calculated electron transport coefficients for a binary mixture of 90\% Ar with 10\% of $BF_3$. Similar mixtures are often used in plasma assited ion implantation applications. In order to determine the role of radicals on kinetics, we have added 1\% of radical species F and $F_2$. The effect of radicals on electron kinetics is relatively small for abundances below 1\%. For higher abundances all transport coefficients, mean energies and rate coefficients are affected to a degree which could affect the operating conditions in plasmas.