Nanosecond-pulsed DBD in atmospheric air and methane-nitrogen mixtures

POSTER

Abstract

Dielectric barrier discharges (DBDs) are non-equilibrium low-temperature discharges. Uniform dielectric barrier discharges have many potentially transformative industrial applications, including uniform thin-film deposition, surface modification of polymers, sterilization of biological samples, treatment of living tissues and cells for their advantages of low gas temperature, moderate power density, uniform energy distribution, controllability of chemical composition and so on. Uniform DBDs are traditionally generated at special conditions (e.g., low pressure, rare gases), and in atmospheric air are of filamentary nature. Recent developments in pulsed power generation technology allowed controllable application of fast-rising short (nanosecond) high voltage pulses for generation of pulsed discharges. In our preliminary studies we have been able to perform fast imaging of the discharge development on nanosecond time scales in atmospheric air, and show transition of DBD from filamentary to uniform mode. We show that the discharge uniformity may be achieved in the case of strong overvoltage (provided by fast rise times), when anode-directed streamers are formed. Here we present our results on fast ICCD imaging of DBD in atmospheric air and methane-nitrogen mixtures for uniformity analysis, as well as temperature and local electric filed measurements using OES.

Authors

  • Danil Dobrynin

    Drexel University

  • Sungil Cho

    Case western Reserve University, Hokkaido University, Kyoto University, North Carolina State University, Oak Ridge National Laboratory, Saint Petersburg Mining University, Saint Petersburg, Russia, Saint Petersburg State University, Saint Petersburg, Russia, Ioffe Institute RAS, Saint Petersburg, Russia, Huazhong University of Science & Technology, Evatec AG, 9477 Truebbach, Switzerland, University of Minnesota, University of Michigan, Dept. Pulse Plasma Systems, IPP, The Czech Academy of Sciences, Czech Republic, Masaryk University, Fac. Sci., Dept. Phys. Electronics., Czech Republic, Nagoya University, Meijo University, INRS - Energie et Materiaux, University of Notre Dame, West Virginia University, Electrodynamics and Physical Electronics Group, Brandenburg University of Technology, Institute of Theoretical Electrical Engineering, Ruhr University Bochum, Dalian University of Technology, Dalian, China, University of California, Berkeley, Wigner Research Centre for Physics, Hungary, Ruhr-University Bochum, Germany, Brandenburg University of Technology, Germany, Photon Science Institute, School of Physics & Astronomy, University of Manchester, Manchester M13 9PL, UK, INP Greifs\-wald, Felix-Hausdorff-Str. 2, 17489 Greifswald, Germany, Lawrence Livermore National Laboratory, Livermore, CA 94550, Illinois Applied Research Institute, Champaign, IL 61820, University of Illinois at Urbana Champaign, Urbana, IL 61801, Sandia National Laboratories, University of Tokyo, Los Alamos National Laboratory, Sugiyama Chemical & Industry Lab., J-Chemical, Inc., Princeton Univ / PPPL, Univ of Alberta, Univ of Saskatchewan, Texas A&M University, Drexel University, National Fusion Research Institute, Old Dominion University, University of San Francisco, Samsung Electronics Co., Chonbuk National University, School of Physics and Optoelectronic Engineering, Dalian University of Technology, Kazan National Research Technological University, Michigan State University, Department of Astrophysical Sciences, Princeton University, Birmingham-Southern College, Tokyo Metropolitan University, Pusan National University, M.F.Stelmach’s Scientific Institute POLUS, Ghent University; Max-Planck-Institut für Plasmaphysik, Ghent University, Max-Planck-Institut für Plasmaphysik, Ghent University; LPP-ERM-KMS, TEC partner, York Plasma Insitute, University of York, Department of electrical engineering, Hanyang university, Air Force Research Laboratory, Department of Electrical Engineering, Hanyang University, The University of Shiga Prefecture, Kharkov National University, 61022, Kharkov, Svobody Sq. 4, Ukraine, Instituto de Plasmas e Fusao Nuclear, Lisboa, Portugal, Kharkov National University, Kharkov, Ukraine, BTU Cottbus-Senftenberg, Germany, FIRST, Tokyo Institute of Technology, MSL, Tokyo Institute of Technology, Plasma Technology Research Center, National Fusion Research Institute, Dalian Maritime University, Korea Electrotechnology Research Institute, AFRL, INTEPH Technologies LLC, St. Petersburg State University, Illinois Wesleyan University, University of Kentucky, Curtin University, Tsinghua University, Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Russia, V. N. Karazin Kharkiv National University, Tokyo Electron America, Masaryk University, Brno, Czech Republic, Semiconductor R&D Center, Samsung Electronics, ET Center, Samsung R&D Institute Japan, Instituto de Plasmas e Fuso Nuclear, Instituto Superior Tecnico, Universidade de Lisboa 1049-001 Lisboa, Portugal, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Nether- lands, Laboratory of Plasma Physics, CNRS, Ecole Polytechnique, UPMC, Université Paris-Saclay, 91128 Palaiseau, France, William & Mary, National Institute of Aerospace, VA and Bowie State University, MD, Bowie State University, MD, Eindhoven University of Technology, University of Saskatchewan, Canada, Princeton Plasma Phys Lab, Shenzhen University, Fermilab, Tech-X Corporation, Tech-X UK Ltd., Ecole Polytechnique, France, Dublin City University, Ireland, Technical University of Denmark, National Space Institute (DTU Space), Kgs. Lyngby, Denmark, LPP, CNRS, Ecole polytechnique, Palaiseau, France, INP-Greifswald, School of Physics and Optoelectronic Technology, Dalian University of Technology, China, Institute for Electrical Engineering, Ruhr-University Bochum, Germany, Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Budapest, Hungary, National Institute for Fusion Science, Hiroshima Univ., LIPHY - CNRS UMR 5588, LSPM - CNRS UPR 3407, TU Braunschweig, Institute for Surface Technology, Bienroder Weg 54, 38108 Braunschweig, Germany, INP Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald, Germany, University of Iowa, NASA-Goddard, University of Maryland Baltimore Country, MD, and University of Colorado, CO, Drake University, Ecole Polytechnique, Samsung Electronics, University of Houston, Dalian University of Technology, Institute of Theoretical Electrical Engineering, Ruhr University Bochum, Germany, Electrical Engineering and Plasma Technology, Ruhr University Bochum, Germany, Microwave Department, Ferdinand-Braun-Institut, Germany, Hitachi, Ltd. Research & Development Group, Sandia Natl Labs, CNRS/Polytechnique, CNRS/Université d'Orléans, Center for Bioelectrics, Old Dominion University, Department of Electrical and Computer Engineering, Old Dominion University, Center for Bioelectrics & Department of Electrical and Computer Engineering, Old Dominion University, Department of Electronic Engineering, Tohoku University, Nagoya Univ., Institute of Theoretical Electrical Engineering, Ruhr-University Bochum, Germany, Institute of Product and Process Innovation, Leuphana University Lüneburg, Germany, Applied Materials Inc., University of York, UK, LPP-CNRS, France, Wigner Research Centre, Hungary, LPICM-CNRS, France, University of York, Synchrotron SOLEIL, LPP, Ecole Polytechnique-CNRS, Applied Materials, Inc., Ruhr-University Bochum, NFRI, Plasmapp, Seoul National University, Samsung electronics

  • Sungil Cho

    Case western Reserve University, Hokkaido University, Kyoto University, North Carolina State University, Oak Ridge National Laboratory, Saint Petersburg Mining University, Saint Petersburg, Russia, Saint Petersburg State University, Saint Petersburg, Russia, Ioffe Institute RAS, Saint Petersburg, Russia, Huazhong University of Science & Technology, Evatec AG, 9477 Truebbach, Switzerland, University of Minnesota, University of Michigan, Dept. Pulse Plasma Systems, IPP, The Czech Academy of Sciences, Czech Republic, Masaryk University, Fac. Sci., Dept. Phys. Electronics., Czech Republic, Nagoya University, Meijo University, INRS - Energie et Materiaux, University of Notre Dame, West Virginia University, Electrodynamics and Physical Electronics Group, Brandenburg University of Technology, Institute of Theoretical Electrical Engineering, Ruhr University Bochum, Dalian University of Technology, Dalian, China, University of California, Berkeley, Wigner Research Centre for Physics, Hungary, Ruhr-University Bochum, Germany, Brandenburg University of Technology, Germany, Photon Science Institute, School of Physics & Astronomy, University of Manchester, Manchester M13 9PL, UK, INP Greifs\-wald, Felix-Hausdorff-Str. 2, 17489 Greifswald, Germany, Lawrence Livermore National Laboratory, Livermore, CA 94550, Illinois Applied Research Institute, Champaign, IL 61820, University of Illinois at Urbana Champaign, Urbana, IL 61801, Sandia National Laboratories, University of Tokyo, Los Alamos National Laboratory, Sugiyama Chemical & Industry Lab., J-Chemical, Inc., Princeton Univ / PPPL, Univ of Alberta, Univ of Saskatchewan, Texas A&M University, Drexel University, National Fusion Research Institute, Old Dominion University, University of San Francisco, Samsung Electronics Co., Chonbuk National University, School of Physics and Optoelectronic Engineering, Dalian University of Technology, Kazan National Research Technological University, Michigan State University, Department of Astrophysical Sciences, Princeton University, Birmingham-Southern College, Tokyo Metropolitan University, Pusan National University, M.F.Stelmach’s Scientific Institute POLUS, Ghent University; Max-Planck-Institut für Plasmaphysik, Ghent University, Max-Planck-Institut für Plasmaphysik, Ghent University; LPP-ERM-KMS, TEC partner, York Plasma Insitute, University of York, Department of electrical engineering, Hanyang university, Air Force Research Laboratory, Department of Electrical Engineering, Hanyang University, The University of Shiga Prefecture, Kharkov National University, 61022, Kharkov, Svobody Sq. 4, Ukraine, Instituto de Plasmas e Fusao Nuclear, Lisboa, Portugal, Kharkov National University, Kharkov, Ukraine, BTU Cottbus-Senftenberg, Germany, FIRST, Tokyo Institute of Technology, MSL, Tokyo Institute of Technology, Plasma Technology Research Center, National Fusion Research Institute, Dalian Maritime University, Korea Electrotechnology Research Institute, AFRL, INTEPH Technologies LLC, St. Petersburg State University, Illinois Wesleyan University, University of Kentucky, Curtin University, Tsinghua University, Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Russia, V. N. Karazin Kharkiv National University, Tokyo Electron America, Masaryk University, Brno, Czech Republic, Semiconductor R&D Center, Samsung Electronics, ET Center, Samsung R&D Institute Japan, Instituto de Plasmas e Fuso Nuclear, Instituto Superior Tecnico, Universidade de Lisboa 1049-001 Lisboa, Portugal, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Nether- lands, Laboratory of Plasma Physics, CNRS, Ecole Polytechnique, UPMC, Université Paris-Saclay, 91128 Palaiseau, France, William & Mary, National Institute of Aerospace, VA and Bowie State University, MD, Bowie State University, MD, Eindhoven University of Technology, University of Saskatchewan, Canada, Princeton Plasma Phys Lab, Shenzhen University, Fermilab, Tech-X Corporation, Tech-X UK Ltd., Ecole Polytechnique, France, Dublin City University, Ireland, Technical University of Denmark, National Space Institute (DTU Space), Kgs. Lyngby, Denmark, LPP, CNRS, Ecole polytechnique, Palaiseau, France, INP-Greifswald, School of Physics and Optoelectronic Technology, Dalian University of Technology, China, Institute for Electrical Engineering, Ruhr-University Bochum, Germany, Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Budapest, Hungary, National Institute for Fusion Science, Hiroshima Univ., LIPHY - CNRS UMR 5588, LSPM - CNRS UPR 3407, TU Braunschweig, Institute for Surface Technology, Bienroder Weg 54, 38108 Braunschweig, Germany, INP Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald, Germany, University of Iowa, NASA-Goddard, University of Maryland Baltimore Country, MD, and University of Colorado, CO, Drake University, Ecole Polytechnique, Samsung Electronics, University of Houston, Dalian University of Technology, Institute of Theoretical Electrical Engineering, Ruhr University Bochum, Germany, Electrical Engineering and Plasma Technology, Ruhr University Bochum, Germany, Microwave Department, Ferdinand-Braun-Institut, Germany, Hitachi, Ltd. Research & Development Group, Sandia Natl Labs, CNRS/Polytechnique, CNRS/Université d'Orléans, Center for Bioelectrics, Old Dominion University, Department of Electrical and Computer Engineering, Old Dominion University, Center for Bioelectrics & Department of Electrical and Computer Engineering, Old Dominion University, Department of Electronic Engineering, Tohoku University, Nagoya Univ., Institute of Theoretical Electrical Engineering, Ruhr-University Bochum, Germany, Institute of Product and Process Innovation, Leuphana University Lüneburg, Germany, Applied Materials Inc., University of York, UK, LPP-CNRS, France, Wigner Research Centre, Hungary, LPICM-CNRS, France, University of York, Synchrotron SOLEIL, LPP, Ecole Polytechnique-CNRS, Applied Materials, Inc., Ruhr-University Bochum, NFRI, Plasmapp, Seoul National University, Samsung electronics