The dynamics of the electron impact excitation in pulse-modulated Ar/O2 inductive coupled plasmas.

POSTER

Abstract

It is well known that there exists E mode and H mode in ICP. In E mode, the temporal evolution of the electron impact excitation rate shows single peak structure, while it displays bimodal structure in H mode over one rf cycle. Therefore, the peak numbers of the electron impact excitation rate can be used for determination of the E-H mode transition. In this paper, an intensified charge-coupled device camera is applied to investigate this dynamics of the electron impact excitation in pulse-modulated rf Ar/O$_{\mathrm{2}}$ ICP, and the end time of the E-H mode transition at the beginning of the pulse is investigated for the first time. It is founded that the end time of the E-H mode transition at the initial stage of a pulse period decreases with increasing the duty cycle or gas pressure, but increases with the source power increasing. This means that the effects of the E-mode at the beginning of a pulse can be weakened to some extent by adjusting the discharge parameters. In addition, we also examined the spatial-temporal distributions of the electron impact excitation rate all over the whole pulse period (with microsecond time-resolution) and especially in the steady state at H mode. The measurements reveal that the axial distribution of the electron impact excitation rate concentrates closer to the quartz window with increasing the O$_{\mathrm{2}}$ content/pressure during H mode operation. Meanwhile, the bimodal structure becomes more prominent at higher O$_{\mathrm{2}}$ content/pressure.

Authors

  • Fei Gao

    Dalian University of Technology

  • Steve Shannon

    Tohoku University, Yokohama National University, ITER-India, Institute for Plasma Research, Gandhinagar, India and HBNI, Mumbai, Group in Computational Science and HPC, DAIICT, Gandhinagar, India, Ruhr University Bochum, Leuphana University Lüneburg, Korea Research Institute of Standards and Science (KRISS), Korea Institute of Machinery and Materials (KIMM), Applied Physics lab for PLasma Engineering (APPLE), Department of Physics, Chungnam Natl Univ, Applied Materials Inc., 1140 E. Arques Avenue Sunnyvale, California 94085, North Carolina State University, Nagoya University, Meijo University, School of Computing and Engineering, University of Huddersfield, Huddersfield, UK, York Plasma Institute, Department of Physics, University of York, York, UK, Leibniz Institute for Plasma Science and Technology, Felix-Hausdorff-Str. 2, 17489 Greifswald, Germany, TEL Technology Center America, Inc., The University of Texas at Austin, Esgee Technologies, Tokyo Electron America, Inc., University of Glasgow, Leibniz Institute for Plasma Science and Technology (INP), Advanced Research Center for Nanolithography, Los Alamos Natl Lab, Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Russia, University of Michigan, Australian National University, University of York, The University of Tokyo, University of Notre Dame, Tokyo Metropolitan Univ, Texas A&M University, Tarleton State University, Nagoya University, Japan, Asahi Glass Company, Ltd., Japan, Toyota Technological Institute, Japan, Ruhr University Bochum, Germany, Ferdinand-Braun-Institut, Germany, Univ of Michigan - Ann Arbor, NASA Jet Propulsion Laboratory, Ad Astra Rocket Company, University of Houston, University P. Sabatier, Air Force Research Lab - Edwards AFB, Holon Inst of Technology, Stony Brook University, Texas A\&M University, Princeton University, Electrodynamics and Physical Electronics Group, Brandenburg University of Technology, Institute of Theoretical Electrical Engineering, Ruhr University Bochum, Applied Materials Inc, School of Physics, Dalian University of Technology, Ruhr-University Bochum, PlasmaPotential - Physics Consulting and Research, Hungarian Academy of Sciences, Univ of Illinois - Urbana, Paderborn University, Michigan State Univ, Kyushu University, Department of Applied Physics, Ghent University, Belgium, National Institute of Laser, Plasma and Radiation, Romania, Samsung Electronics Co., Ulster University, Christian-Albrechts-University Kiel, Los Alamos National Laboratory, Curtin University, Stockholm University, Swansea University, Institut de Mecanique des Fluides de Toulouse (IMFT), Universite de Toulouse, CNRS, INPT, UPS, France, UMR-CNRS 6226, Sciences Chimiques de Rennes, Universite de Rennes 1, France, Department of Graphic Arts and Photophysics, University of Pardubice, Czech Republic, Institut des Materiaux Jean Rouxel, Universite de Nantes, CNRS, France, Hitachi Ltd., Research Development Group, Columbia University, National University of Defense Technology, Applied Materials, Queen's University Belfast UK, Seikei University, Tokyo, Japan, Kwangwoon University, Institute of Fluid Physics, CAEP, Institute for Plasma Research, Tokai Univ, Chubu Electric Power Co., Inc., Plasma Research Laboratory CO.LTD, Tokai University, Nihon University, Joint Institute for High Temperatures, RUSSIA, V. N. Karazin Kharkiv National University, Ukraine, Princeton Plasma Physics Laboratory, Lawrence Berkeley National Laboratory, RadiaSoft LLC, Ioffe Institute RAS, St. Petersburg State University, St. Petersburg Mining University, George Washington University, ISAE, University of Toulouse, LAPLACE, CNRS and University of Toulouse, Dalian University of Technology, Universite Paris 13 - LSPM CNRS UPR 3407, West Virginia University, Dep. Electrical Engineering, Hanyang University, Seoul, Republic of Korea, Japan Coast Guard Academy, University of Hyogo, Osaka University, Kyoto Inst of Tech, Dalian Nationalities University, Hokkaido University, Texas A&M Univ, Tokyo City University, Tokyo city University, Tokyo city university, National Fusion Research Institute, Tokyo Metropolitan University, TU Braunschweig, Institute for Surface Technology, Bienroder Weg 54, 38108 Braunschweig, Germany, Groupe des Couches Minces (GCM) and Department of Engineering Physics, Polytechnique Montr{\'e}al, Montreal QC, Canada H3C 3A7, Empa, Swiss Federal Laboratories for Materials Science and Technology, Plasma \& Coating Group, Lerchenfeldstr.~5, 9014 St. Gallen, Switzerland, Technion, Rafael, University of Saskatchewan, Hanyang University, Hanyang Univ, Applied Physics lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Applied Materials, Inc., Seikei University, The University of Shiga Prefecture, Kyoto University, Ruhr University Bochum, West Virginia University, Instituto de Plasmas e Fusao Nuclear, Instituto Superior Tecnico, Universidade de Lisboa, 1049-001 Lisboa, Portugal, LPP, CNRS, Ecole Polytechnique, UPMC, Universite Paris-Saclay, 91128 Palaiseau, France, Lawrence Livermore National Laboratory, Illinois Applied Research Institute, Univ. of Illinois Urbana-Champaign, Semiconductor R\&D Center, Samsung Electronics, ET Center, Samsung R\&D Institute Japan, Univ of California - San Diego, Obukhov Institute of Atmospheric Physics RAS, Moscow, Moscow Power Engineering Institute, Moscow, Hokkaido Univ, Michigan State University, Institute for High Temperatures of RAS, Universidade da Madeira, Facility for Rare Isotope Beams, Michigan State University, National Superconducting Cy- clotron Laboratory, Michigan State University, Universite de Montreal, Max Planck Institute for Plasma Physics, Garching, Germany, SMDC, Redstone Arsenal, UAH Systems Management and Production Center, University of Science and Technology of China, Hefei 230026, China, Max-Planck-Institute for Kernphysik, Heidelberg, Germany, Dalian University of Technology, China, Princeton Plasma Phys Lab, Tech-X Corporation, University of Colorado, and Worcester Polytechnic Institute, USA, Department of Electrical Engineering, Hanyang University, Applied Physics, California Institute of Technology, Plasma Technology Research Center, Nation Fusion Research Institute, Korea Research Inst of Standards and Science (KRISS), Ruhr-University Bochum, Germany, BTU Cottbus-Senftenberg, Germany, Korea Research Institute of Standards and Science, Republic of Korea, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Republic of Korea, Princeton Plasma Physics Lab, Huazhong University of Science & Technology, Institute for Plasma Research India, Lam Research Corp, Ruhr-Univ Bochum, Wigner Research Centre for Physics, West Virginia Univ, Department of Physics, West Virginia University, Morgantown, USA, SUPA and Department of Physics, University of Strathclyde, Glasgow, UK, School of Physical Electronics, University of Electronic Science & Technology of China, Chengdu, China, High Voltage Division, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, China, College of Electronic Science and Technology, Shenzhen University, Shenzhen, China, V.N. Karazin Kharkiv National University, LPP, Ecole Polytechnique, Palaiseau, France, V.N. Karazin Kharkiv National University, 61022, Kharkov, Leibniz Institute for Plasma Science and Technology, 17489 Greifswald, Germany, Kiel University, ITAP, 24098 Kiel, Germany, Institute of High Current Electronics, Tomsk Polytechnic University, Sandia National Laboratories, West Virginia University, Wigner Research Centre for Physics, Ruhr-University Bochum, West Virginia University, Samsung Electronics, Tech-X Corporation, U. S. A., Brandenburg University of Technology, Germany, Ecole Polytechnique, France, Hungarian Academy of Sciences, Budapest, Ruhr University, Germany, CEA/CESTA, Sandia Natl Labs, Univ of Sci & Tech of China, UCSD, AU Online, Technical University Chemnitz, Brandenburg University of Technology Cottbus-Senftenberg, Saint Petersburg Mining University, Osaka Univ, National Institute for Fusion Science, National Defense Academy, Japan, Troitsk Institute for Innovation and Fusion Research, Wigner Research Center for Physics, Hungary, Missouri Univ of Sci & Tech, Tblisi State University, University College London, LSPM-CNRS, LPGP-CNRS, West Virginia University, Morgantown, USA; Ruhr-University Bochum, Germany, University of York, Heslington, UK, Brandenburg University of Technology, Cottbus, Germany, Hungarian Academy of Sciences, Budapest, Hungary, Insitute of Modern Physics Lanzhou, Drexel University, Institute of Electrical Engineering, Ruhr-University Bochum, Germany Department of Physics, West Virginia University, USA, Wigner Research Centre for Physics, Hungary, Department of Physics, West Virginia University, USA, Idaho National Laboratory, Oak Ridge National Laboratory, Old Dominion University, University of San Francisco, CERFACS, CERFACS - now ONERA, University of Illinois, North Carolina State Universty

  • Steve Shannon

    Tohoku University, Yokohama National University, ITER-India, Institute for Plasma Research, Gandhinagar, India and HBNI, Mumbai, Group in Computational Science and HPC, DAIICT, Gandhinagar, India, Ruhr University Bochum, Leuphana University Lüneburg, Korea Research Institute of Standards and Science (KRISS), Korea Institute of Machinery and Materials (KIMM), Applied Physics lab for PLasma Engineering (APPLE), Department of Physics, Chungnam Natl Univ, Applied Materials Inc., 1140 E. Arques Avenue Sunnyvale, California 94085, North Carolina State University, Nagoya University, Meijo University, School of Computing and Engineering, University of Huddersfield, Huddersfield, UK, York Plasma Institute, Department of Physics, University of York, York, UK, Leibniz Institute for Plasma Science and Technology, Felix-Hausdorff-Str. 2, 17489 Greifswald, Germany, TEL Technology Center America, Inc., The University of Texas at Austin, Esgee Technologies, Tokyo Electron America, Inc., University of Glasgow, Leibniz Institute for Plasma Science and Technology (INP), Advanced Research Center for Nanolithography, Los Alamos Natl Lab, Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Russia, University of Michigan, Australian National University, University of York, The University of Tokyo, University of Notre Dame, Tokyo Metropolitan Univ, Texas A&M University, Tarleton State University, Nagoya University, Japan, Asahi Glass Company, Ltd., Japan, Toyota Technological Institute, Japan, Ruhr University Bochum, Germany, Ferdinand-Braun-Institut, Germany, Univ of Michigan - Ann Arbor, NASA Jet Propulsion Laboratory, Ad Astra Rocket Company, University of Houston, University P. Sabatier, Air Force Research Lab - Edwards AFB, Holon Inst of Technology, Stony Brook University, Texas A\&M University, Princeton University, Electrodynamics and Physical Electronics Group, Brandenburg University of Technology, Institute of Theoretical Electrical Engineering, Ruhr University Bochum, Applied Materials Inc, School of Physics, Dalian University of Technology, Ruhr-University Bochum, PlasmaPotential - Physics Consulting and Research, Hungarian Academy of Sciences, Univ of Illinois - Urbana, Paderborn University, Michigan State Univ, Kyushu University, Department of Applied Physics, Ghent University, Belgium, National Institute of Laser, Plasma and Radiation, Romania, Samsung Electronics Co., Ulster University, Christian-Albrechts-University Kiel, Los Alamos National Laboratory, Curtin University, Stockholm University, Swansea University, Institut de Mecanique des Fluides de Toulouse (IMFT), Universite de Toulouse, CNRS, INPT, UPS, France, UMR-CNRS 6226, Sciences Chimiques de Rennes, Universite de Rennes 1, France, Department of Graphic Arts and Photophysics, University of Pardubice, Czech Republic, Institut des Materiaux Jean Rouxel, Universite de Nantes, CNRS, France, Hitachi Ltd., Research Development Group, Columbia University, National University of Defense Technology, Applied Materials, Queen's University Belfast UK, Seikei University, Tokyo, Japan, Kwangwoon University, Institute of Fluid Physics, CAEP, Institute for Plasma Research, Tokai Univ, Chubu Electric Power Co., Inc., Plasma Research Laboratory CO.LTD, Tokai University, Nihon University, Joint Institute for High Temperatures, RUSSIA, V. N. Karazin Kharkiv National University, Ukraine, Princeton Plasma Physics Laboratory, Lawrence Berkeley National Laboratory, RadiaSoft LLC, Ioffe Institute RAS, St. Petersburg State University, St. Petersburg Mining University, George Washington University, ISAE, University of Toulouse, LAPLACE, CNRS and University of Toulouse, Dalian University of Technology, Universite Paris 13 - LSPM CNRS UPR 3407, West Virginia University, Dep. Electrical Engineering, Hanyang University, Seoul, Republic of Korea, Japan Coast Guard Academy, University of Hyogo, Osaka University, Kyoto Inst of Tech, Dalian Nationalities University, Hokkaido University, Texas A&M Univ, Tokyo City University, Tokyo city University, Tokyo city university, National Fusion Research Institute, Tokyo Metropolitan University, TU Braunschweig, Institute for Surface Technology, Bienroder Weg 54, 38108 Braunschweig, Germany, Groupe des Couches Minces (GCM) and Department of Engineering Physics, Polytechnique Montr{\'e}al, Montreal QC, Canada H3C 3A7, Empa, Swiss Federal Laboratories for Materials Science and Technology, Plasma \& Coating Group, Lerchenfeldstr.~5, 9014 St. Gallen, Switzerland, Technion, Rafael, University of Saskatchewan, Hanyang University, Hanyang Univ, Applied Physics lab for PLasma Engineering (APPLE), Department of Physics, Chungnam National University, Applied Materials, Inc., Seikei University, The University of Shiga Prefecture, Kyoto University, Ruhr University Bochum, West Virginia University, Instituto de Plasmas e Fusao Nuclear, Instituto Superior Tecnico, Universidade de Lisboa, 1049-001 Lisboa, Portugal, LPP, CNRS, Ecole Polytechnique, UPMC, Universite Paris-Saclay, 91128 Palaiseau, France, Lawrence Livermore National Laboratory, Illinois Applied Research Institute, Univ. of Illinois Urbana-Champaign, Semiconductor R\&D Center, Samsung Electronics, ET Center, Samsung R\&D Institute Japan, Univ of California - San Diego, Obukhov Institute of Atmospheric Physics RAS, Moscow, Moscow Power Engineering Institute, Moscow, Hokkaido Univ, Michigan State University, Institute for High Temperatures of RAS, Universidade da Madeira, Facility for Rare Isotope Beams, Michigan State University, National Superconducting Cy- clotron Laboratory, Michigan State University, Universite de Montreal, Max Planck Institute for Plasma Physics, Garching, Germany, SMDC, Redstone Arsenal, UAH Systems Management and Production Center, University of Science and Technology of China, Hefei 230026, China, Max-Planck-Institute for Kernphysik, Heidelberg, Germany, Dalian University of Technology, China, Princeton Plasma Phys Lab, Tech-X Corporation, University of Colorado, and Worcester Polytechnic Institute, USA, Department of Electrical Engineering, Hanyang University, Applied Physics, California Institute of Technology, Plasma Technology Research Center, Nation Fusion Research Institute, Korea Research Inst of Standards and Science (KRISS), Ruhr-University Bochum, Germany, BTU Cottbus-Senftenberg, Germany, Korea Research Institute of Standards and Science, Republic of Korea, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Republic of Korea, Princeton Plasma Physics Lab, Huazhong University of Science & Technology, Institute for Plasma Research India, Lam Research Corp, Ruhr-Univ Bochum, Wigner Research Centre for Physics, West Virginia Univ, Department of Physics, West Virginia University, Morgantown, USA, SUPA and Department of Physics, University of Strathclyde, Glasgow, UK, School of Physical Electronics, University of Electronic Science & Technology of China, Chengdu, China, High Voltage Division, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, China, College of Electronic Science and Technology, Shenzhen University, Shenzhen, China, V.N. Karazin Kharkiv National University, LPP, Ecole Polytechnique, Palaiseau, France, V.N. Karazin Kharkiv National University, 61022, Kharkov, Leibniz Institute for Plasma Science and Technology, 17489 Greifswald, Germany, Kiel University, ITAP, 24098 Kiel, Germany, Institute of High Current Electronics, Tomsk Polytechnic University, Sandia National Laboratories, West Virginia University, Wigner Research Centre for Physics, Ruhr-University Bochum, West Virginia University, Samsung Electronics, Tech-X Corporation, U. S. A., Brandenburg University of Technology, Germany, Ecole Polytechnique, France, Hungarian Academy of Sciences, Budapest, Ruhr University, Germany, CEA/CESTA, Sandia Natl Labs, Univ of Sci & Tech of China, UCSD, AU Online, Technical University Chemnitz, Brandenburg University of Technology Cottbus-Senftenberg, Saint Petersburg Mining University, Osaka Univ, National Institute for Fusion Science, National Defense Academy, Japan, Troitsk Institute for Innovation and Fusion Research, Wigner Research Center for Physics, Hungary, Missouri Univ of Sci & Tech, Tblisi State University, University College London, LSPM-CNRS, LPGP-CNRS, West Virginia University, Morgantown, USA; Ruhr-University Bochum, Germany, University of York, Heslington, UK, Brandenburg University of Technology, Cottbus, Germany, Hungarian Academy of Sciences, Budapest, Hungary, Insitute of Modern Physics Lanzhou, Drexel University, Institute of Electrical Engineering, Ruhr-University Bochum, Germany Department of Physics, West Virginia University, USA, Wigner Research Centre for Physics, Hungary, Department of Physics, West Virginia University, USA, Idaho National Laboratory, Oak Ridge National Laboratory, Old Dominion University, University of San Francisco, CERFACS, CERFACS - now ONERA, University of Illinois, North Carolina State Universty

  • You-Nian Wang

    Dalian University of Technology, Dalian University of Technology, China