Stability and Electronic Properties of Hybrid SnO Bilayers: SnO/Graphene and SnO/BN

Van der Waals structures based on 2D materials have been considered as promising design for novel nanoscale electronic devices. Very recently, intrinsic p-type semiconducting 2D SnO films were fabricated. Using the density functional theory, we consider the vertically stacked heterostructures consisting of SnO monolayer with graphene or BN monolayer to investigate their stability, electronic and transport properties. Our calculated results show that properties of the constituent monolayers are retained in these SnO-based heterostructures. In SnO/graphene heterostructure, a p-type Schottky barrier is formed and this Schottky barrier can be effectively controlled with an external electric field, which is useful characteristics for the van der Waals heterostructure-based electronic devices. However, in the SnO/BN heterostructure, the electronic properties of SnO are least affected by the insulating monolayer, which suggesting the BN monolayer to be an ideal substrate for the SnO-based nanoscale devices.