Generation, Transport and Imaging of Pure Valley Currents in van der Waals Heterostructures

ORAL

Abstract

Two-dimensional (2D) hexagonal materials provide a promising platform for valleytronics devices, owing to the convenient generation and manipulation of valley qubits. However, efficient generation of valley qubits with long valley lifetime cannot be achieved in single material due to intrinsic valley relaxation channels. Here we show that, such intrinsic limit can be completely overcome through combining two materials into a van der Waals heterostructure; and report both near-perfect generation efficiency of valley qubits, as well as record-high valley lifetime. Furthermore, we demonstrate generation, transport, and spatial-temporal imaging of the valley currents in a single device, which opens up new exciting opportunities to realize novel spintronic and valleytronic applications.

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Presenters

  • Chenhao Jin

    Univ of California - Berkeley, University of California at Berkeley

Authors

  • Chenhao Jin

    Univ of California - Berkeley, University of California at Berkeley

  • Jonghwan Kim

    University of California at Berkeley

  • Iqbal Utama

    Physics, Univ of California - Berkeley, University of California at Berkeley, Univ of California - Berkeley, University of California, Berkeley

  • Emma Regan

    University of California at Berkeley

  • Hans Kleemann

    University of California at Berkeley, Technische Universität Dresden

  • Hui Cai

    Arizona State University

  • Yuxia Shen

    Arizona State University

  • Matthew Shinner

    University of California at Berkeley

  • ARJUN SENGUPTA

    University of California at Berkeley

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Advanced materials laboratory, National institute for Materials Science, NIMS-Japan

  • Takashi Taniguchi

    National Institute for Materials Science, NIMS, National Institute for Material Science, Advanced Materials Laboratory, National Institute for Materials Science, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science (NIMS, Advanced Materials Laboratory, NIMS, National Institute for Materials Science, Advanced Materials Laboratory, National Institue for Materials Science, National Institute of Material Science, National Institute for Matericals Science, Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, NIMS-Japan

  • Sefaattin Tongay

    Materials Science and Engineering, Arizona State University, Arizona State University

  • Alex Zettl

    UC Berkeley and LBNL, UC berkeley, Univ of California - Berkeley, Physics, UC Berkeley, Physics, University of California, Berkeley, University of California at Berkeley, Physics, University of California - Berkeley, Department of Physics, Univ of California - Berkeley

  • Feng Wang

    Physics, Univ of California - Berkeley, University of California, Berkeley, Univ of California - Berkeley, University of California at Berkeley, UC Berkeley and LBNL