Dopants and Defects in Semiconductors - Nitrides

FOCUS · K11

Presentations

  • Defect Level of a C-Related Center in C-Doped GaN

    ORAL

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    Presenters

    • Subash Paudel

      Department of Physics, Univ of Alabama - Birmingham

    Authors

    • Subash Paudel

      Department of Physics, Univ of Alabama - Birmingham

    • William Willoughby

      Department of Physics, Univ of Alabama - Birmingham

    • Mary Zvanut

      Department of Physics, Univ of Alabama - Birmingham

    • M. Bockowski

      Institute of High Pressure Physics Police Academy of Sciences

    • M. Iwinska

      Institute of High Pressure Physics Police Academy of Sciences

    • T. Sochacki

      Institute of High Pressure Physics Police Academy of Sciences

    View abstract →

  • Calcium Impurities as Nonradiative Recombination Centers in InGaN

    ORAL

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    Presenters

    • Chris Van de Walle

      University of California, Santa Barbara, Materials Department, Univ of California - Santa Barbara, Materials Department, University of California, Santa Barbara, Materials, Univ of California - Santa Barbara, Materials Department, University of California - Santa Barbara, Materials Department, University of California

    Authors

    • Jimmy Shen

      Department of Physics, University of California, Department of Physics, Univ of California - Santa Barbara, Materials, Univ of California - Santa Barbara

    • Darshana Wickramaratne

      Materials Department, University of California, Santa Barbara, Materials Department, University of California - Santa Barbara, Materials Department, University of California, Electrical and computer Science engineering, University of California Riverside, Materials Department, Univ of California - Santa Barbara

    • Chris Van de Walle

      University of California, Santa Barbara, Materials Department, Univ of California - Santa Barbara, Materials Department, University of California, Santa Barbara, Materials, Univ of California - Santa Barbara, Materials Department, University of California - Santa Barbara, Materials Department, University of California

    View abstract →

  • Study of proton irradiation-induced effects on electrical and optical characteristics of AlGaN/GaN epi-structures

    ORAL

    –

    Presenters

    • Min Khanal

      Auburn University, Department of Physics, Auburn University, Physics, Auburn University

    Authors

    • Min Khanal

      Auburn University, Department of Physics, Auburn University, Physics, Auburn University

    • Kosala Yapabandara

      Auburn University, Department of Physics, Auburn University

    • Vahid Mirkhani

      Auburn University, Physics, Auburn University, Department of Physics, Auburn University

    • Tamara Isaacs-Smith

      Physics, Auburn University, Department of Physics, Auburn University

    • Benjamin Schoenek

      Department of Physics, Auburn University

    • Shiqiang Wang

      Electrical and Computer Engineering , Auburn University, Electrical and Computer Engineering, Auburn University

    • Sunil Uprety

      Department of Physics, Auburn University, Physics, Auburn University

    • Ayayi Ayhi

      Department of Physics, Auburn University

    • Sarit Dhar

      Department of Physics, Auburn University, Physics, Auburn University

    • Michael Bozack

      Department of Physics, Auburn University

    • Minseo Park

      Physics, Auburn University, Department of Physics, Auburn University

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  • Strategies for <i>p-</i>type doping in ZnGeN<sub>2</sub>

    ORAL

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    Presenters

    • Nicholas Adamski

      Department of Electrical and Computer Engineering, University of California - Santa Barbara

    Authors

    • Nicholas Adamski

      Department of Electrical and Computer Engineering, University of California - Santa Barbara

    • Darshana Wickramaratne

      Materials Department, University of California, Santa Barbara, Materials Department, University of California - Santa Barbara, Materials Department, University of California, Electrical and computer Science engineering, University of California Riverside, Materials Department, Univ of California - Santa Barbara

    • Zhen Zhu

      Materials Department, University of California - Santa Barbara, Materials, Univ of California - Santa Barbara, University of California, Santa Barbara

    • Chris Van de Walle

      University of California, Santa Barbara, Materials Department, Univ of California - Santa Barbara, Materials Department, University of California, Santa Barbara, Materials, Univ of California - Santa Barbara, Materials Department, University of California - Santa Barbara, Materials Department, University of California

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  • Predicting properties of Zn<sub>1+x</sub>Sn<sub>1-x</sub>N<sub>2-2x</sub>O<sub>2x</sub>: defects and disorders

    ORAL

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    Presenters

    • Jie Pan

      Natl Renewable Energy Lab

    Authors

    • Jie Pan

      Natl Renewable Energy Lab

    • Jacob Cordell

      Natl Renewable Energy Lab

    • Andriy Zakutayev

      National Renewable Energy Laboratory, Colorado School of Mines, Natl Renewable Energy Lab

    • Stephan Lany

      National Renewable Energy Laboratory, Natl Renewable Energy Lab, NREL

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  • Defects in N-Rich, Si-Rich, and Stoichiometric Silicon Nitride Thin Films Observed Using Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance

    ORAL

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    Presenters

    • Ryan Waskiewicz

      Pennsylvania State University, Engineering Science and Mechanics, Pennsylvania State Univ, Engineering Science and Mechanics, Pennsylvania State University

    Authors

    • Ryan Waskiewicz

      Pennsylvania State University, Engineering Science and Mechanics, Pennsylvania State Univ, Engineering Science and Mechanics, Pennsylvania State University

    • Michael Mutch

      Micron Technologies

    • Patrick Lenahan

      Pennsylvania State University, Engineering Science and Mechanics, Pennsylvania State Univ, Engineering Science and Mechanics, Pennsylvania State University

    • Sean King

      Intel Corporation

    View abstract →