Strategies for p-type doping in ZnGeN2

ORAL

Abstract

ZnGeN2 is a direct wide-band-gap earth-abundant semiconductor that is a candidate material for optoelectronic devices. To leverage the properties of ZnGeN2 in devices requires strategies for identifying candidate dopants that can be introduced in a controlled manner. Using density functional theory with a hybrid functional, we study the role of group-III and group-I elements as candidate acceptors. We show that substitutional Al on the Ge site is the most promising acceptor, with a level 0.24 eV above the valence-band maximum, similar to the ionization energy of the Mg acceptor in GaN. However, self-compensation due to Al substitution on the Zn site is expected to be strong. We also explore the role of hydrogen complexes with the group-III elements and identify strategies for hydrogen-assisted p-type doping of ZnGeN2.

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Presenters

  • Nicholas Adamski

    Department of Electrical and Computer Engineering, University of California - Santa Barbara

Authors

  • Nicholas Adamski

    Department of Electrical and Computer Engineering, University of California - Santa Barbara

  • Darshana Wickramaratne

    Materials Department, University of California, Santa Barbara, Materials Department, University of California - Santa Barbara, Materials Department, University of California, Electrical and computer Science engineering, University of California Riverside, Materials Department, Univ of California - Santa Barbara

  • Zhen Zhu

    Materials Department, University of California - Santa Barbara, Materials, Univ of California - Santa Barbara, University of California, Santa Barbara

  • Chris Van de Walle

    University of California, Santa Barbara, Materials Department, Univ of California - Santa Barbara, Materials Department, University of California, Santa Barbara, Materials, Univ of California - Santa Barbara, Materials Department, University of California - Santa Barbara, Materials Department, University of California