Magnetism of Magnetic Impurity Doped GaN Modulated by Spinodal Decomposition

ORAL

Abstract

GaN is expected as a material of full-color monolithic light emitting diodes (LEDs), because GaN and InGaN are known as materials of blue and green LEDs, respectively and Eu-doped GaN enabled to fabricate red LEDs. Eu-doped GaN possesses not only an ability to emit light but also magnetic properties and self-generated modulations by spinodal decomposition. This property provides us with an expectation of fabrication of multifunctional materials for spintronics. We investigate magnetism of magnetic Eu-doped GaN modulated by spinodal decomposition using the density functional calculations and the Monte-Carlo simulations. As a result, we obtain that the larger cluster of EuN causes hystereses of magnetization as a function of external magnetic field. In this talk, we will discuss the magnetism, the critical temperatures, and an effect of the magneto-crystalline anisotropies.

Presenters

  • Akira Masago

    CSRN, Osaka University

Authors

  • Akira Masago

    CSRN, Osaka University

  • Hikari Shinya

    Graduate School of Engineering, YNU, Graduate School of Engineering, Yokohama National University

  • Tetsuya Fukushima

    INSD, Osaka University, Institute for NanoScience Design, Osaka University

  • Kazunori Sato

    Graduate School of Engineering, Osaka University

  • Hiroshi Katayama-Yoshida

    CSRN, The University of Tokyo, CSRN, The university of Tokyo