Electrical Transport Properties and Raman studies of few-layered Arsenic Doped Black Phosphorus Field-effect Transistor

Arsenic doped black phosphorus (As-BP) has recently emerged as a new semiconducting layered material with tunable electronic and optical properties. Here we will present detail electrical transport properties of few-layered Arsenic doped black phosphorus (As-BP) field-effect transistor fabricated on Si/SiO₂ substrate using Ti/Au contacts. By modulating the back gate voltage, the few-layered As-BP channel exhibit hole doped characteristic with intrinsic charge carrier mobility at room temperature ~300cm²/Vs and it increases to ~600cm²/Vs at low temperature. Moreover, the transistor ON/OFF current ratio is obtained as large as 10⁴ -10⁶.We will also present the polarization resolved Raman scattering studies reveals the anisotropic nature of As-BP.