Dopants and Defects in Semiconductors - Quantum Information
FOCUS · R11
Presentations
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New color centers in diamond for long distance quantum networks
Invited
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Presenters
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Nathalie De Leon
Electrical Engineering, Princeton University
Authors
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Nathalie De Leon
Electrical Engineering, Princeton University
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Theoretical Studies on the Stability and Positioning of Germanium-Vacancy (GeV) Color Centers in Diamond
ORAL
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Presenters
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Rodrick Kuate Defo
Harvard University
Authors
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Rodrick Kuate Defo
Harvard University
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Efthimios Kaxiras
Department of Physics, Harvard University, Harvard Univ, Harvard University, Physics, Harvard University, School of Engineering and Applied Science, Harvard University
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Steven Richardson
Howard University
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Ab initio theory of intersystem crossings in diamond nitrogen-vacancy qubit
ORAL
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Presenters
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Adam Gali
Wigner Research Centre for Physcis, Hungarian Academy of Sciences, Wigner Research Centre for Physics, Hungarian Academy of Science
Authors
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Adam Gali
Wigner Research Centre for Physcis, Hungarian Academy of Sciences, Wigner Research Centre for Physics, Hungarian Academy of Science
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Gergo Thiering
Wigner Research Centre for Physcis, Hungarian Academy of Sciences
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Yield Improvement of SiV<sup>-</sup> Color Centers in Diamond via Silicon/Carbon Sequential Implantation
ORAL
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Presenters
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Edward Bielejec
Sandia National Labs
Authors
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Will Hardy
Sandia National Labs
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Duncan Lee
Sandia National Labs
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Edward Bielejec
Sandia National Labs
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Study of surface impurities on nanodiamonds by ELDOR-detected NMR
ORAL
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Presenters
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Zaili Peng
Department of Chemistry, Univ of Southern California, University of Southern California
Authors
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Zaili Peng
Department of Chemistry, Univ of Southern California, University of Southern California
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Chathuranga Abeywardana
Department of Chemistry, Univ of Southern California, Chemistry Department, University of Southern California, Chemistry, University of Southern California
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Susumu Takahashi
Department of Chemistry, Department of Physics & Astronomy, Univ of Southern California, University of Southern California, Chemistry and Physics & Astronomy Department, University of Southern California, Chemistry and Physics & Astronomy, University of Southern California
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Resonant excitation of a single dichroic vacancy spin in silicon carbide
ORAL
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Presenters
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Roland Nagy
Univ Stuttgart
Authors
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Roland Nagy
Univ Stuttgart
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Matthias Niethammer
Univ Stuttgart, 3rd Institute of Physics, University of Stuttgart
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Florian Kaiser
Univ Stuttgart
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Oney Soykal
Sotera Defense Solutions at Naval research Laboratory, Naval Research Laboratory, Naval Research Laborator
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Durga Dasari
Max Planck Institute for Solid State Research, Univ Stuttgart
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Nguyen Son
Linkoping Univensity, Linköping University, Semiconductor Materials, IFM, Linköping University
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Cristian Bonato
Heriot-Watt University
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Sang-Yun Lee
Korea Institute of Science and Technology
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J. Wrachtrup
University Stuttgart, 3. Physikalisches Institut, Universität Stuttgart, Univ Stuttgart, 3rd Institute of Physics, University of Stuttgart, University of Stuttgart, Physics Department, University of Stuttgart
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Alexey Feofanov
University of Innsbruck, University of Waterloo, Korea University, Okinawa Institute of Science and Technology, University of California - Los Angeles, The University of Manchester, University of Puerto Rico at Humacao, Department of Physics & Electronics, University of Puerto Rico at Cayey, Department of Mathematics-Physics, Oak Ridge National Lab, Max Planck Institute for Chemical Physics of Solids, Department of Physics, University of Puerto Rico, Electrical Engineering Department, University of Arkansas, Department of Physics, University of Arkansas, School of Basic Sciences at IIT Mandi, H.P., India, Computational Biology, Flatiron Institute, Physics, Hong Kong Univ of Sci & Tech, University of California, Los Angeles, Max Planck Inst, Institute for Theoretical Physics, University of Cologne, Department of Physics, Simon Fraser University, Deutsches Elektronen Synchrotron (DESY), Institut fur Theoretische Physik, Univerisitat zu Berlin, Institut fur Physik, Univerisitat zu Berlin, Plymouth State University, The Graduate Center, CUNY, Nordita, KTH Royal Institute of Technology and Stockholm University, Univ of Connecticut - Storrs, Univ Stuttgart, University of Chicago, University of Texas at El Paso, University of Tulsa, California Institute of Technology, Georgia Institute of Technology, Universite Paris Diderot, Laboratoire MPQ, Universita di Trento, BEC Center, ICTP Trieste, Universita di Pisa, Inst of Physics Academia Sinica, Batelle, Cal State Univ- San Bernardino, Chemical Engineering, University of Michigan, QCD Labs, Department of Applied Physics, Aalto University, Yale University, MIT, Harvard Univ, Chemical & Environmental Engineering, University of California, Riverside, University of Frankfurt, Germany, University of Hamburg, Germany, Naval Research Laboratory, Cornell Univ, National Institute for Material Science, U.S. Naval Research Laboratory, Washington DC, Materials Engineering, University of Santa Barbara, Institute of Physics, Chinese Academy of Sciences, Univ of Texas, Arlington, MIT Lincoln Laboratory, University of Sydney, Iowa State University, Purdue University, Kansas State University, University of Maryland, John Hopkins University, Universite de Sherbrooke, Physics, Konkuk University, Perimeter Institute, University of Waterloo, D-Wave, San Jose State University, Université de Sherbrooke, Institute of Physics, EPFL - Lausanne
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Theory of spin polarization of the silicon vacancy center in hexagonal SiC
ORAL
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Presenters
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Wenzheng Dong
Virginia Tech
Authors
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Wenzheng Dong
Virginia Tech
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Sophia Economou
Virginia Tech
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Optical Absorption and Emission Mechanisms of Single Defects in Hexagonal Boron Nitride
ORAL
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Presenters
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Nicholas Jungwirth
Applied and Engineering Physics, Cornell University, Cornell Univ
Authors
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Nicholas Jungwirth
Applied and Engineering Physics, Cornell University, Cornell Univ
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Gregory Fuchs
Applied and Engineering Physics, Cornell University, Cornell Univ, School of Applied and Engineering Physics, Cornell University, Applied Engineering Physics, Cornell University, Cornell University
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Ge-Vn complexes in silicon: a viable route toward room temperature single atom devices
ORAL
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Presenters
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Simona Achilli
Physics Department, University of Milan
Authors
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Simona Achilli
Physics Department, University of Milan
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Enrico Prati
IFN, CNR
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Takashi Tanii
Waseda University
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Nicola Manini
Physics Department, University of Milan
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Giovanni Onida
Physics Department, University of Milan
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Towards coupling Bismuth Dopant Spins in Silicon to Superconducting Resonators at 'Clock Transitions’
ORAL
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Presenters
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James O'Sullivan
London Centre for Nanotechnology
Authors
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James O'Sullivan
London Centre for Nanotechnology
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Christoph Zollitsch
London Centre for Nanotechnology
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Leonid Abdurakhimov
London Centre for Nanotechnology
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Gavin Dold
London Centre for Nanotechnology
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Oscar Kennedy
London Centre for Nanotechnology
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Eva Dupont-Ferrier
CEA Saclay
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Jarryd Pla
Center for Quantum Computation and Communication Technology, University of New South Wales, London Centre for Nanotechnology
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Patrice Bertet
CEA Saclay, Quantronics group, Service de Physique de l'Etat Condensé, CEA-Saclay
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John Morton
London Centre for Nanotechnology, University College London, London Centre for Nanotechnology
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Identification and all-optical dynamic nuclear polarization of Si-vacancy related room temperature qubits in SiC
ORAL
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Presenters
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Viktor Ivady
Wigner Research Centre for Physics
Authors
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Viktor Ivady
Wigner Research Centre for Physics
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Joel Davidsson
Linkoping Univensity
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Nguyen Son
Linkoping Univensity, Linköping University, Semiconductor Materials, IFM, Linköping University
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Takeshi Ohshima
National Institutes for Quantum and Radiological Science and Technology, Advanced Functional Materials Research, National Institutes for Quantum and Radiological Science and Technology
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Igor Abrikosov
The Department of Physics, Chemistry and Biology (IFM), Linköping University, Linkoping Univensity, Materials Modeling and Development Laboratory, National University of Science and Technology “MISIS”
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Adam Gali
Wigner Research Centre for Physics, Hungarian Academy of Sciences, Wigner Research Centre for Physics
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Directed Positioning of Subsurface Single-Atom Dopants in Silicon for Quantum Computing
ORAL
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Presenters
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Bethany Hudak
Oak Ridge National Lab
Authors
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Bethany Hudak
Oak Ridge National Lab
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Jiaming Song
Oak Ridge National Lab
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Hunter Sims
Department of Physics and Astronomy, Vanderbilt University, Physics and Astronomy, Vanderbilt University
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Sokrates Pantelides
Department of Physics and Astronomy, Vanderbilt University, Vanderbilt University, Physics and Astronomy, Vanderbilt University, Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Dept. of Physics and Astronomy , Vanderbilt University, Vanderbilt Univ, Physics, Vanderbilt Univ
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Paul Snijders
Oak Ridge National Lab
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Andrew Lupini
Oak Ridge National Lab
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Defects in silicon – old story or new horizons ?
ORAL
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Presenters
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Hans Huebl
Walther-Meissner-Institut
Authors
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Petio Natzkin
Walther-Meissner-Institut, Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften
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Stefan Weichselbaumer
Walther-Meissner-Institut
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Martin Brandt
Walter Schottky Institut, Technische Universität München
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Rudolf Gross
Walther-Meißner-Institut & TU München, Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Institut, Walther Meissner Insitut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften
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Hans Huebl
Walther-Meissner-Institut
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