Fabrication of Single Donor and Single Electron Transistors for Quantum Technologies

NIST is developing atomically precise, atom-based electronic devices for use in quantum information processing (QIP) and quantum materials research. We are using hydrogen-based scanning probe lithography to enable deterministic placement of individual dopant atoms with atomically aligned contacts and gates to fabricate single electron transistors for use in spin-to-charge conversion and single atom devices for use as qubits.

We have developed robust lithography, device relocation, and contact processes that enable routine electrical measurement of atomically precise devices with an emphasis on minimizing process-induced dopant movement. Our low temperature palladium silicide contact process provides low-resistance ohmic contacts with yield better than 98%.

This presentation will cover fabrication and characterization of STM patterned nanometer scale wire devices to investigate low dimensional transport. We will present the design and characterization of multiple single electron transistors that demonstrate stable coulomb blockade oscillations. We will demonstrate controlled variation in electronic and quantum properties as a function of atomic scale changes in device geometry. This will include spectroscopic measurements of atomically precise, single atom devices.