A study of deep level defects in β-Ga₂O₃ using thermal admittance spectroscopy

The β-Ga₂O₃ semiconductor is receiving great interest due to its potential applications for high power and deep-ultraviolet devices. However, in spite of a promising future of β-Ga₂O₃ device technology, its electronic properties, in particular deep level defects, are still not well understood. In this paper we investigated deep level defects in unintentionally doped β-Ga₂O₃ Schottky diodes, edge-defined film fed grown, using thermal admittance spectroscopy (TAS). An Arrhenius analysis of the TAS measurements shows two deep levels with energies of E₁=0.428 eV and E₂=1.07 eV and cross sections of σ₁=1.83x10^-13 cm² and σ₂=4.64x10^-13 cm², respectively.