Defects in Semiconductors -- Wide Band Gap
FOCUS · K11
Presentations
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Vibrational spectroscopy of O-H centers in Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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Michael Stavola
Lehigh University
Authors
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Michael Stavola
Lehigh University
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W Fowler
Lehigh University
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Ying Qin
Lehigh University
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Multiple O-H centers in β-Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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W Fowler
Lehigh University
Authors
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W Fowler
Lehigh University
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Michael Stavola
Lehigh University
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Ying Qin
Lehigh University
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Probing the Nanoscale Interplay of Native Defects and Doping in Oxide Semiconductors
Invited
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Presenters
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Leonard Brillson
Ohio State University, Department of Physics, The Ohio State University
Authors
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Leonard Brillson
Ohio State University, Department of Physics, The Ohio State University
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Deep acceptors in Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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Hartwin Peelaers
Department of Physics and Astronomy, University of Kansas, University of Kansas
Authors
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Hartwin Peelaers
Department of Physics and Astronomy, University of Kansas, University of Kansas
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John Lyons
Center for Computational Materials Science, US Naval Research Laboratory, United States Naval Research Laboratory
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Joel Basile Varley
Lawrence Livermore National Laboratory
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Chris Van de Walle
University of California, Santa Barbara, Materials Department, University of California, Santa Barbara, University of California, Santa Barbara, CA 93106, USA
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A study of deep level defects in β-Ga<sub>2</sub>O<sub>3</sub> using thermal admittance spectroscopy
ORAL
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Presenters
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Mo Ahoujja
Physics, The University of Dayton
Authors
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J Hendricks
Air Force Institute of Technology, Wright-Patterson AFB, OH
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Mo Ahoujja
Physics, The University of Dayton
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Shin Mou
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH
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Adam T Neal
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH
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QSGW calculation of the band structure of Ga2O3-Al2O3 alloys
ORAL
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Presenters
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Amol Ratnaparkhe
Case Western Reserve University
Authors
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Amol Ratnaparkhe
Case Western Reserve University
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Walter R L Lambrecht
Case Western Reserve University
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Enabling <i>p</i>-type doping in In<sub>2</sub>O<sub>3</sub> by a band engineering through alloying
ORAL
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Presenters
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Fernando Sabino
Department of Material science and Engineering, University of Delaware, Department of Physics & Astronomy, University of Delaware, Materials Science and Engineering, University of Delaware
Authors
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Fernando Sabino
Department of Material science and Engineering, University of Delaware, Department of Physics & Astronomy, University of Delaware, Materials Science and Engineering, University of Delaware
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Suhuai Wei
Beijing Computational Science Research Center
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Anderson Janotti
Department of Material science and Engineering, University of Delaware, Department of Physics & Astronomy, University of Delaware, Materials Science and Engineering, University of Delaware, University of Delaware, Department of Materials Science & Engineering, University of Delaware, Department of Materials Science and Engineering, University of Delaware
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Non-exponential decay of persistent photocarriers in an AlGaN/AlN/GaN heterostructure
ORAL
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Presenters
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David Daughton
Lake Shore Cryotronics (United States)
Authors
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David Daughton
Lake Shore Cryotronics (United States)
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BoKuai Lai
Lake Shore Cryotronics (United States)
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Jeffrey Lindemuth
Lake Shore Cryotronics (United States)
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Incorporation of Boron in Gallium Nitride
ORAL
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Presenters
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Mark E. Turiansky
University of California, Santa Barbara, Department of Physics, University of California, Santa Barbara
Authors
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Mark E. Turiansky
University of California, Santa Barbara, Department of Physics, University of California, Santa Barbara
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Jimmy Shen
University of California, Santa Barbara, Department of Physics, University of California, Santa Barbara
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Darshana Wickramaratne
NRC Research Associate residing at, US Naval Research Laboratory, Washington, DC 20375, USA, Naval Research Laboratory, Materials Department, University of California, Santa Barbara, University of California, Santa Barbara
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Chris Van de Walle
University of California, Santa Barbara, Materials Department, University of California, Santa Barbara, University of California, Santa Barbara, CA 93106, USA
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Identifying Defects and their Electronic Signatures in Regrown GaN Heterostructures
ORAL
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Presenters
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Jiaheng He
Department of Materials Science and Engineering, University of Michigan
Authors
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Jiaheng He
Department of Materials Science and Engineering, University of Michigan
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Guanjie Cheng
Department of Materials Science and Engineering, University of Michigan
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Davide Del Gaudio
Materials Science and Engineering, University of Michigan, Department of Materials Science and Engineering, University of Michigan
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Jordan M Occena
Department of Materials Science and Engineering, University of Michigan, Materials Science and Engineering, University of Michigan
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Fabian Naab
Michigan Ion Beam Laboratory, University of Michigan
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Rachel Goldman
Materials Science and Engineering, university of Michigan, Materials Science and Engineering, University of Michigan, Materials Science & Engineering, University of Michigan - Ann Arbor, Department of Materials Science and Engineering, University of Michigan
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Mohsen Nami
Department of Electrical Engineering, Yale University
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Bingjun Li
Department of Electrical Engineering, Yale University
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Jung Han
Department of Electrical Engineering, Yale University
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Spectrally resolved dynamics of energy transfer in GaN:Eu
ORAL
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Presenters
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Ruoqiao Wei
Lehigh University
Authors
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Ruoqiao Wei
Lehigh University
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Brandon Mitchell
West Chester University
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Dolf Timmerman
Osaka University
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Tom Gregorkiewicz
University of Amsterdam
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Wanxin Zhu
Osaka University
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Yasufumi Fujiwara
Osaka University
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Volkmar R G Dierolf
Lehigh University, Physics, Lehigh University
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Photoluminescence quantum efficiency of Nd optical centers in GaN epilayers
ORAL
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Presenters
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Yifei Wang
Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech, Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
Authors
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Yifei Wang
Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech, Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
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Ho Vinh
Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech, Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
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Vinh Q Nguyen
Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech, Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
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Interface chemistry and electrical characteristics of 4H-SiC/SiO<sub>2</sub> after nitridation in varying atmospheres
ORAL
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Presenters
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Anna Regoutz
Imperial College London
Authors
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Anna Regoutz
Imperial College London
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