Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

ORAL

Abstract

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V.s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena.

–

Presenters

  • Cheng Chen

    shanghaiTech University

Authors

  • Cheng Chen

    shanghaiTech University

  • Meixiao Wang

    shanghaiTech University

  • Jinxiong Wu

    peking university

  • Huixia Fu

    Weizmann Institute of Science

  • Haifeng Yang

    shanghaiTech University, School of Physical Science and Technology, ShanghaiTech University, People's Republic of China

  • Zhen Tian

    shanghaiTech University

  • Teng Tu

    peking university

  • Han Peng

    University of Oxford, Department of Engineering, University of Oxford

  • Yan Sun

    Max Planck Institute for Chemical Physics of Solids, Max Planck Institute

  • Xiang Xu

    tsinghua university

  • Juan Jiang

    shanghaiTech University, Yale Univ, Applied Physics, Yale University, School of Engineering & Applied Science, Yale University, USA

  • Niels Schröter

    University of Oxford, Swiss Light Source, Paul Scherrer Institut, Paul Scherrer Institute, Paul Scherrer Institut, Swiss Light Source

  • Yiwei Li

    University of Oxford, Department of Physics, University of Oxford, United Kingdom, Department of Physics, University of Oxford

  • Ding Pei

    University of Oxford

  • Shuai Liu

    shanghaiTech University

  • Sandy Adhitia Ekahana

    University of Oxford, Department of Physics, University of Oxford

  • Hongtao Yuan

    Nanjing University

  • Jiamin Xue

    shanghaiTech University, ShanghaiTech University

  • Gang Li

    shanghaiTech University, School of Physical Science and Technology, ShanghaiTech University

  • Jinfeng Jia

    shanghai jiao tong university, Shanghai Jiao Tong University, Department of Physics and Astronomy, Shanghai Jiao Tong University

  • zhongkai liu

    shanghaiTech University, School of Physical Science and Technology, ShanghaiTech University, People's Republic of China, School of Physical Science and Technology, ShanghaiTech University

  • Binghai Yan

    Weizmann Institute of Science

  • hailin peng

    peking university

  • Yulin Chen

    University of Oxford, Department of Physics, University of Oxford, United Kingdom, Department of Physics, University of Oxford