Superconducting Qubits Integrated with Superconducting Through-Substrate Vias (TSVs): Fabrication

ORAL

Abstract

Three-dimensional integration (3DI) is a promising approach to provide increased connectivity for complex arrays of superconducting qubits while maintaining qubit performance. In this talk we describe our process flow for fabricating wafers of superconducting through-substrate vias (TSVs) which may be integrated directly into superconducting qubit chips and/or bump bond integrated with high-coherence qubits to carry signals to and from the qubit layer.

–

Presenters

  • Donna-Ruth Yost

    MIT Lincoln Laboratory, Massachusetts Institute of Technology

Authors

  • Donna-Ruth Yost

    MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Mollie E. Schwartz

    MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Danna Rosenberg

    MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Justin Mallek

    MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Rabindra Das

    Massachusetts Institute of Technology

  • Alexandra L Day

    MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • David K Kim

    MIT Lincoln Lab, Lincoln Laboratory, Massachusetts Institute of Technology, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Massachusetts Institute of Technology Lincoln Laboratory, Lincoln Lab, Massachusetts Institute of Technology, USA, MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Bethany M. Niedzielski

    Massachusetts Institute of Technology, MIT Lincoln Laboratory, MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02421

  • Alexander Melville

    MIT Lincoln Lab, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Lincoln Laboratory, Massachusetts Institute of Technology, MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02421, MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Wayne Woods

    MIT Lincoln Lab, MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Jonilyn L Yoder

    MIT Lincoln Lab, Lincoln Laboratory, Massachusetts Institute of Technology, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Massachusetts Institute of Technology Lincoln Laboratory, Lincoln Lab, Massachusetts Institute of Technology, USA, MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02421, MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • Andrew James Kerman

    MIT Lincoln Laboratory, Massachusetts Institute of Technology

  • William D Oliver

    Research Laboratory of Electronics, Massachusetts Institute of Technology, Department of Physics, Research Laboratory of Electronics, Lincoln Laboratory, Massachusetts Institute of Technology, MIT Lincoln Lab, MIT Lincoln Laboratory, Department of Physics, Massachusetts Institute of Technology, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Research Laboratory of Electronics, Physics, Lincoln Laboratory, Massachusetts Institute of Technology, Department of Physics, Massachusetts Institute of Technology, Research Laboratory of Electronics, Massachusetts Institute of Technology, MIT Lincoln Laboratory, Physics, Massachusetts Institute of Technology, Dept. of Physics, Research Laboratory of Electronics, and Lincoln Lab, Massachusetts Institute of Technology, USA, Research Laboratory of Electronics, Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA, Massachusetts Institute of Technology and MIT Lincoln Laboratory, Research Laboratory of Electronics, MIT Lincoln Laboratory, Department of Physics, Massachusetts Institute of Technology, Department of Physics, Research Laboratory of Electronics, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Department of Physics, MIT; Research Laboratory of Electronics, MIT; MIT Lincoln Laboratory