Van der Waals charge-transfer interfaces

ORAL

Abstract

The creation of functional interfaces between different materials has often led to a discovery of a unique electronic property and functionality that is missing in the constituent materials, providing an invaluable material platform in modern science and technology. 2D materials are suitable compounds for construction of such an interface due to existence of the van der Waals gap that enables creation of an atomically-abrupt interface, and in fact various types of heterostructures named ‘van der Waals heterostructures’ have been more and more developed for the last few years. However, those researches have mainly focused on electrical transport across the interface, while lateral transport properties along the interface have been less studied so far. In this presentation, we will demonstrate emergence of electrical conduction at the interface between insulating 2D materials fabricated by molecular-beam epitaxy with our growth recipe [1]. [1] M. Nakano, et. al., Nano Lett. 17, 5595 (2017).

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Presenters

  • Yuta Kashiwabara

    Department of Applied Physics, The University of Tokyo

Authors

  • Yuta Kashiwabara

    Department of Applied Physics, The University of Tokyo

  • Masaki Nakano

    Department of Applied Physics, The University of Tokyo, University of Tokyo

  • Yuji Nakagawa

    Department of Applied Physics, The University of Tokyo, Department of applied physics, University of Tokyo, University of Tokyo

  • Yue Wang

    Department of Applied Physics, The University of Tokyo

  • Hideki Matsuoka

    Department of Applied Physics, The University of Tokyo, University of Tokyo

  • Yoshihiro Iwasa

    Department of Applied Physics, The University of Tokyo, University of Tokyo, Department of applied physics, University of Tokyo, Department of Applied Physics, University of Tokyo, Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo