Scalable donor-based electron spin qubit unit in silicon
ORAL
Abstract
Donor-based spin qubit has gained attention, for its long coherence time and great scalability on processing. With the development of scanning tunneling microscope (STM) lithography and micro-nano fabrication, large-scale donor-based spin qubit devices are promising. However, manufacturing is not the only challenge. There are two critical issues including the tunability of the two-qubit coupling and the addressability of computing qubits. In this talk, we propose a scalable unit of donor-based electron spin qubits that incorporates an ancilla donor. In particular, we introduce an asymmetric structure that exhibits great compatibility between the tunability of two-qubit coupling and the addressability, with the aid of so-called 'superexchange' and hyperfine interaction. And the fidelity of single-qubit and two-qubit gates can exceed the fault-tolerant threshold. Moreover, the asymmetric scheme can resist the valley oscillation of the tunneling coupling, with a nanoscale placement accuracy of donors. Consequently, the proposed scheme is a promising prototype for the large-scale fault-tolerant spin-based quantum processor.
* This work is supported by the National Natural Science Foundation of China (Grants No. 11904157, No. 62174076, and No. 92165210), Shenzhen Science and Technology Program (Grant No. KQTD20200820113010023), and Guangdong Provincial Key Laboratory (Grant No. 2019B121203002).
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Presenters
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Shihang Zhang
Southern University of Science and Technology
Authors
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Shihang Zhang
Southern University of Science and Technology
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Yu He
Southern University of Science and Technology
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Peihao Huang
Southern University of Science and Technology