Defects and Doping in Si, Ge, SiC, and Diamond
FOCUS · M03 · ID: 2154729
Presentations
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Abstract Withdrawn
ORAL · Invited · Withdrawn
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Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis
ORAL
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Publication: [1] A. Pambukhchyan, S. Weng, I. Aravind, S. B. Cronin and S. Takahashi, Mater. Quantum. Technol. 3 035005 (2023).
Presenters
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Artur Pambukhchyan
University of Southern California
Authors
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Artur Pambukhchyan
University of Southern California
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Sizhe Weng
University of Southern California
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Indu Aravind
Univ of Southern California
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Stephen B Cronin
University of Southern California
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Susumu Takahashi
Univ of Southern California
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Development and Applications of High-field NV-detected NMR-ESR Techniques
ORAL
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Publication: [1] B. Fortman and S. Takahashi, J. Phys. Chem. A 123, 6350-6355 (2019)
[2] Yuhang Ren, Cooper Selco, Dylan Kawashiri, Michael Coumans, Benjamin Fortman, Louis S. Bouchard, Karoly Holczer and Susumu Takahashi, Phys. Rev. B 108, 045421 (2023)
[3] B. Fortman, L. Mugica-Sanchez, N. Tischler, C. Selco, Y. Hang, K. Holczer and, S. Takahashi, J. Appl. Phys. 130, 083901 (2021)
[4] Santiago Bussandri, Daphna Shimon, Asif Equbal, Yuhang Ren, Susumu Takahashi, Chandrasekhar Ramanathan and Songi Han, Submitted (2023).Presenters
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Yuhang Ren
University of Southern California
Authors
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Yuhang Ren
University of Southern California
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Cooper M Selco
University of Southern California
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Dylan Kawashiri
University of Southern California
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Michael H Coumans
University of Southern California
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Benjamin Fortman
University of Southern California
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Louis S Bouchard
University of California, Los Angeles
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Karoly Holczer
University of California, Los Angeles
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Susumu Takahashi
Univ of Southern California
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Fast optoelectronic charge state conversion of silicon vacancies in diamond
ORAL
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Publication: M. Rieger et al., submitted to Science advances, Fast optoelectronic charge state conversion of silicon vacancies in diamond (2023).
M. Rieger et al., arxiv preprint, Fast optoelectronic charge state conversion of silicon vacancies in diamond (2023).Presenters
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Manuel Rieger
Walter Schottky Institute, TU Munich
Authors
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Manuel Rieger
Walter Schottky Institute, TU Munich
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Viviana Villafañe
Walter Schottky Institute, TU München
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Lina Todenhagen
Walter Schottky Institute, TU Munich
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Stephan Matthies
Walter Schottky Institute, TU Munich
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Stefan Appel
Walter Schottky Institute, TU Munich
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Martin S Brandt
Tech Univ Muenchen
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Kai Muller
Walter Schottky Institute, TU Munich, TU Munich
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Jonathan J Finley
Walter Schottky Institute, TU Munich, TU Munich
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Excited States in the Si G-center from First-Principles GW/BSE Calculations
ORAL
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Presenters
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Arabi Seshappan
UC Merced
Authors
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Arabi Seshappan
UC Merced
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Yihuang Xiong
Dartmouth College
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Bradford A Barker
University of California, Merced
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Sinead M Griffin
Lawrence Berkeley National Laboratory
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Geoffroy Hautier
Dartmouth College
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David A Strubbe
University of California, Merced
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Solid state defect emitters with no electrical activity
ORAL
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Publication: https://arxiv.org/abs/2310.09849; arXiv:2310.09849
Presenters
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Ádám Gali
Wigner Research Centre for Physics
Authors
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Ádám Gali
Wigner Research Centre for Physics
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First-principles investigation of near surface donor-acceptor pairs in silicon carbide
ORAL
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Publication: [1] Anil Bilgin, Ian Hammock, Jeremy Estes, Yu Jin, Hannes Bernien, Alexander High and Giulia Galli, arXiv: 2305.05791 (2023)
Presenters
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Anil Bilgin
University of Chicago
Authors
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Anil Bilgin
University of Chicago
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Ian N Hammock
University of Chicago
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Hannes Bernien
UChicago, University of Chicago
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Alexander A High
University of Chicago
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Giulia Galli
University of Chicago
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Quantifying Phosphorous Levels in Ultrathin Si Films using Second Harmonic Generation
ORAL
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Publication: J.G. Mihaychuk, J. Bloch, Y. Liu, H.M. van Driel, Time-dependent second-harmonic generation from the Si–SiO_2 interface induced by charge transfer, Opt. Lett. 20 (1995) 2063, https://doi.org/10.1364/OL.20.002063.
J.G. Mihaychuk, N. Shamir, H.M. van Driel, Multiphoton photoemission and electric-field-induced optical second-harmonic generation as probes of charge transfer across the Si/SiO2, Phys. Rev. B. 59 (1999) 2164–2173, https://doi.org/ 10.1103/PhysRevB.59.2164.Presenters
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Ting Yu Yen
Physics, National Cheng Kung University
Authors
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Ting Yu Yen
Physics, National Cheng Kung University
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Yu-Hsiang Huang
Physics, National Cheng Kung University
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Meng-Ting Shih
Physics, National Cheng Kung University
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Wei-Ting Chen
Physics, National Cheng Kung University
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Tzu-En Huang
Physics, National Cheng Kung University
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Hua-Hsing Liu
National Cheng Kung University, Physics, National Cheng Kung University
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Kung-Ming Hung
National Kaohsiung University of Science and Technology
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Kuang-Yao Lo
Physics, National Cheng Kung University
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First-principles study of persistent spin helix on OH-terminated diamond, Si, and Ge surfaces
ORAL
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Publication: H. P. Kadarisman, N. Yamaguchi, and F. Ishii, Appl. Phys. Express 16, 023001 (2023).
Presenters
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Hana Pratiwi Kadarisman
Kanazawa University
Authors
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Hana Pratiwi Kadarisman
Kanazawa University
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Naoya Yamaguchi
Kanazawa Univ
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Fumiyuki Ishii
Kanazawa University
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Dispersive Sensing of an STM-Tip Induced Quantum Dot in P-doped Si(100)
ORAL
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Presenters
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Jonathan J Marbey
Laboratory for Physical Science
Authors
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Jonathan J Marbey
Laboratory for Physical Science
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Michael Dreyer
University of Maryland, College Park
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Matthew Brooks
Laboratory for Physical Sciences, College Park, MD, Laboratory for Physical Sciences
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Yun-Pil Shim
University of Texas at El Paso
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Robert E Butera
Laboratory for Physical Sciences
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Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond
ORAL
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Publication: 1. Photo-induced charge state dynamics of the neutral and negatively
charged silicon vacancy centers in room-temperature diamond, G. Garcia-Arellano, G. I. López-Morales, N. B. Manson, J. Flick, A. A. Wood, and C. A. Meriles, submitted to Advanced MaterialsPresenters
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Guadalupe Garcia Arellano
City College of New York
Authors
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Carlos A Meriles
City College of New York, The City College of New York
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Guadalupe Garcia Arellano
City College of New York
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Gabriel I López-Morales
City College of New York, The City College of New York
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Johannes Flick
City College of New York
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Neil B Manson
Department of Quantum Science and Technology, Research School of Physics, Australian National University, Canberra, A.C.T. 2601, Australia
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Alexander A Wood
University of Melbourne
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Charged Defects in Germanium: A First-Principles Study
ORAL
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Presenters
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Sandip Aryal
Los Alamos National Laboratory
Authors
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Sandip Aryal
Los Alamos National Laboratory
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Enrique R Batista
Los Alamos National Laboratory
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Gaoxue Wang
Los Alamos National Laboratory
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Characterising arsenic dopant incorporation in germanium
ORAL
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Publication: Hofmann et. al., Angewandte Chemie, 62(7), (2023)
Manuscript in progressPresenters
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Rebecca L Conybeare
University College London
Authors
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Rebecca L Conybeare
University College London
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Procopios Constantinou
Paul Scherrer Institut
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Taylor J Stock
University College London
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Neil J Curson
University College London
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Vladimir N Strokov
Paul Scherrer Institute, Paul Scherrer Institut
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Gabriel Aeppli
Paul Scherrer Institut
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Steven R Schofield
University College London
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