Defects in Diamond and Other Semiconductors
FOCUS · N03 · ID: 2154731
Presentations
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Revisiting the Formulation of Charged Defects in Solids
ORAL · Invited
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Presenters
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Shengbai Zhang
Rensselaer Polytechnique Institute, Rensselaer Polytechnic Institute
Authors
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Shengbai Zhang
Rensselaer Polytechnique Institute, Rensselaer Polytechnic Institute
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Exploring Bulk <sup>13</sup>C Nuclei at the Low Temperature and High Magnetic Field Regime
ORAL
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Publication: [1] Beatrez, W., et al., Phys. Rev. Lett. 127, 170603 (2021)
[2] Sahin, O., Nat. Commun. 13, 5486 (2022)
[3] Beatrez, W., et al., Phys. Rev. Lett. 131, 010802 (2023)
[4] Takahashi, S., et al., Phys. Rev. Lett. 101, 047601 (2008)Presenters
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Cooper M Selco
University of California Berkeley
Authors
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Cooper M Selco
University of California Berkeley
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Kieren A Harkins
University of California Berkeley
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David Marchiori
University of California Berkeley
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Ashok Ajoy
University of California, Berkeley
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Photocurrent mapping in optoelectronic diamond devices
ORAL
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Publication: Photocurrent mapping in optoelectronic diamond devices, in prep.
Presenters
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Alexander A Wood
University of Melbourne
Authors
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Alexander A Wood
University of Melbourne
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Daniel J McCloskey
University of Melbourne
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Artur Lozovoi
City College of New York
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Russell M Goldblatt
University of Melbourne
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Kaih T Mitchell
University of Melbourne
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David A Broadway
RMIT University
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Christopher T Lew
University of Melbourne
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Brett C Johnson
RMIT University
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Jean-Philippe Tetienne
RMIT University
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Carlos A Meriles
City College of New York, The City College of New York
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Andy M Martin
University of Melbourne
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Solvated Electrons at the Diamond-Water Interface: Insights from NV Centers
ORAL
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Presenters
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Kang Xu
CUNY-The City College of New York, City College of New York
Authors
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Kang Xu
CUNY-The City College of New York, City College of New York
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Daniela Pagliero
City College of New York
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Gustavo Lopez
The City University of New York, Lehman College, Lehman College of the City University of New York, Lehman College, CUNY-Lehman College, CUNY-Lehman College CUNY-Lehman College
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Nicolas Giovambattista
The City University of New York, Brooklyn College, Brooklyn College of the City University of New York
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Abraham Wolcott
City College of New York, San José State University
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Carlos A Meriles
City College of New York, The City College of New York
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First-principles calculation of the Stark shift for the NV center in diamond
ORAL
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Presenters
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Louis Alaerts
Dartmouth College
Authors
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Louis Alaerts
Dartmouth College
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Yihuang Xiong
Dartmouth College
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Alp Sipahigil
University of California, Berkeley and Lawrence Berkeley National Laboratory, University of California, Berkeley, University of California, Berkeley; Lawrence Berkeley National Laboratory
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Sinead M Griffin
Lawrence Berkeley National Laboratory
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Geoffroy Hautier
Dartmouth College
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Effective mass approximation for spatial structures of two different single acceptors imaged by STM: bismuth in silicon and manganese in indium antimonide
ORAL
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Presenters
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Julian Zanon
Department of Applied Physics, Eindhoven University of Technology
Authors
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Julian Zanon
Department of Applied Physics, Eindhoven University of Technology
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Michael E Flatté
University of Iowa, Department of Physics and Astronomy, University of Iowa
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High-pressure Thermoelectric properties of ZnAs and CdAs
ORAL
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Presenters
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Zakariae Darhi
Michigan Technological University
Authors
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Zakariae Darhi
Michigan Technological University
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Ashima Rawat
Michigan Technological University, MTU
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Ravindra Pandey
Michigan Technological University
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Larbi Elfarh
Mohammed First University
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Origin of defect intolerance in low-symmetry semiconductors
ORAL
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Presenters
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Menglin Huang
Fudan University, Fudan Univ
Authors
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Menglin Huang
Fudan University, Fudan Univ
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Shanshan Wang
Fudan University
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Shiyou Chen
Fudan University, Fudan Univ
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Designing carbon-based defects in icosahedral alpha boron from first principles
ORAL
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Publication: 1. A. Chakraborti, Y. Cho, J. Sjakste, B. Baptiste, L. Henry, N. Guignot, Y. Le Godec, N. Vast, Acta Materialia 249, 118820 (2023).
2. Engineering in-gap levels in alpha boron with carbon-based defects, Y. Cho, J. Sjakste, N. Vast, in preparation.Presenters
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Yeonsoo Cho
Ecole Polytechnique
Authors
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Yeonsoo Cho
Ecole Polytechnique
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Jelena Sjakste
CNRS
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Nathalie Vast
CEA-Saclay
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Ab-initio study of the energy competition between $Gamma$ and K valleys in bilayer transition metal dichalcogenides
ORAL
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Presenters
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Samuel W Olin
Binghamton University
Authors
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Samuel W Olin
Binghamton University
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Wei-Cheng Lee
Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USA, Binghamton University
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Erekle Jmukhadze
Binghamton University
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Allan H. H MacDonald
The University of Texas at Austin, University of Texas, Austin, Dept. of Physics, Univ. of Texas at Austin
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Modulation of optical selection rules in twisted transition metal dichalcogenide heterobilayer.
ORAL
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Publication: 1. W. Li, T. Brumme, and T. Heine, "Relaxation effects in transition metal dichalcogenide bilayer heterostructures." (Manuscript submitted for npj 2D Mater. Appl.).
2. W. Li, G. Jha, T. Brumme, and T. Heine, "Modulation of optical selection rules in twisted transition metal dichalcogenide heterobilayer." (in preparation).Presenters
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Wei Li
Technische Universität Dresden
Authors
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Wei Li
Technische Universität Dresden
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Gautam Jha
Technische Universität Dresden
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Thomas Brumme
Technische Universität Dresden
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Thomas Heine
Technische Universität Dresden
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Langevin Dynamics/Monte Carlo Simulations of Structural and Dielectric Modulations of Moire Materials
ORAL
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Presenters
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Steven B Hancock
JHUAPL
Authors
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Steven B Hancock
JHUAPL
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David P Landau
University of Georgia
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Yohannes Abate
University of Georgia, Department of Physics and Astronomy, University of Georgia, Athens, GA
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