High-pressure Thermoelectric properties of ZnAs and CdAs

ORAL

Abstract

Applying pressure is an effective method for understanding the evolution of the thermoelectric properties and is important for exploring novel applications of semiconducting materials. In this talk, we present the results of the bulk and doped- CdAs and ZnAS obtained using density functional theory. The effect of high pressure on the structural and electronic properties will be assessed in terms of the lattice constant, band structure, density of states and the figure of merit ZT of these semiconducting materials.

* Fulbright Program

Presenters

  • Zakariae Darhi

    Michigan Technological University

Authors

  • Zakariae Darhi

    Michigan Technological University

  • Ashima Rawat

    Michigan Technological University, MTU

  • Ravindra Pandey

    Michigan Technological University

  • Larbi Elfarh

    Mohammed First University