Superconducting through-silicon vias as capacitive elements in quantum circuits

ORAL · Invited

Abstract

Superconducting qubits and their control components typically require large capacitances. The dimensions of the capacitors can be large due to the relatively low capacitance density of 2D planar designs. In this talk, I will discuss our recent work utilizing high-quality superconducting through-silicon vias (TSVs) as the capacitive element in both qubits and readout resonators. The introduction of TSVs has led to a reduction in the size of the qubits and resonators, while maintaining a high qubit coherence [1]. I will additionally describe our work exploring the use of TSVs as part of a hybrid superconducting-semiconducting qubit platforms [2].

[1] T. M. Hazard et al., Appl. Phys. Lett. 123, 154004 (2023).

[2] T. M. Hazard et al., Phys. Rev. Appl. 20, 034056 (2023).

* This material is based upon work supported in part by the U.S. Department of Energy, Office of Science, Office of Advanced Scientific Computing Research, High Performance Computing and Network Facilities (Rep - Quantum Testbeds), under contract number: FWP #FP00008338; in part by the Undersecretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002; and in part by the LPS Qubit Collaboratory. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the U.S. Government.

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Publication: Appl. Phys. Lett. 123, 154004 (2023) and Phys. Rev. Appl. 20, 034056 (2023).

Presenters

  • Thomas M Hazard

    Lincoln Laboratory, Massachusetts Institute of Technology, MIT Lincoln Lab, MIT Lincoln Laboratory

Authors

  • Thomas M Hazard

    Lincoln Laboratory, Massachusetts Institute of Technology, MIT Lincoln Lab, MIT Lincoln Laboratory