Dynamically induced spin defect formation and orientation under an electric field in semiconductors

Spin defects in semiconductors, such as negatively charged nitrogen vacancy (NV) centers in diamond and neutral divacancies (VV) in silicon carbide, offer promising platforms for qubit development in quantum technologies. Traditionally, these defects are introduced through methods like electron irradiation or ion implantation, followed by thermal annealing, which can be energy-intensive and prone to uncontrolled atomic diffusion. In this work, we present a novel approach to spatially localize spin defects by for spin defect formation with dynamics and external electric field to lower energy barriers for Through density functional theory (DFT) calculations and the nudged elastic band method, We evaluate the defect migration barriers for NV centers in diamond and VV in silicon carbide under varying electric fields. Our findings reveal the potential for more efficient, localized spin defect creation, offering a pathway to reduced energy consumption and improved spatial control.