Magnetic resonance spectroscopy and simulation of spin defects in silicon carbide for quantum magnetometry

Oral-In-person  · Withdrawn

Abstract

Quantum sensing represents a transformative technology for NASA missions requiring self-calibrating, low Size, Weight, And Power (SWaP) magnetometers capable of operating in harsh heliophysical and planetary environments. Traditional field probes face limitations in radiation tolerance, power efficiency, and long-term stability, motivating the development of solid-state quantum magnetometers based on spin defects. The Quantum Sensing and Spin Physics (Q-SASP) laboratory is advancing this effort by exploiting spin-dependent phenomena in silicon carbide (SiC) diodes, probed through electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). By optimizing bias and modulation amplitude, an effective magnetic-field sensitivity of 13.2 nT Hz^-1/2 was achieved. Power-dependent characterization further demonstrates how radio-frequency drive conditions modulate signal amplitudes and linewidths, identifying practical regimes for high-performance operation. Moreover, hyperfine-induced singlet-triplet mixing was observed near zero field, enabling prospects for absolute magnetometry and spintronic applications. Here, a comprehensive, resonance-by-resonance simulation of EDMR signatures is presented arising from the negatively charged silicon vacancy in 4H-SiC. The model accurately reproduces the full experimental spectral response and quantitatively demonstrates that spin-dependent recombination pathways are the primary factors that govern magnetometric sensitivity and overall device performance.These results establish a quantitative foundation for radiation-hard, SiC-based quantum sensors tailored for space-borne magnetic field measurements.

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Presenters

  • Daniel Hart

    • Southern University and A & M College

Authors

  • Daniel Hart

    • Southern University and A & M College