Defects in Silicon Carbide and emerging defects

FOCUS · MAR-C10 · ID: MAR-C10

Presentations

  • Oral-In-person

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    Publication: [1] J. Davidsson; NV-like defects more common than four-leaf clovers: A perspective on high-throughput point defect data. Appl. Phys. Lett. 127 150501 (2025)
    [2] https://defects.anyterial.se/
    [3] O. Bulancea-Lindvall, J. Davidsson, R. Armiento, & I. A. Abrikosov Chlorine vacancy in 4H-SiC: An NV-like defect with telecom-wavelength emission. PRB, 108, 224106 (2023)

    Presenters

    • Joel Davidsson

      • Linkoping University

    Authors

    • Joel Davidsson

      • Linkoping University

    • Danial Shafizadeh

    • Oscar Bulancea-Lindvall

      • Linköping University

    • Rickard Armiento

      • Linkoping University

    • Jawad Ul-Hassan

    • Tien Son Nguygen

    • Ivan Ivanov

    • Igor A. Abrikosov

      • Linkoping University

    View abstract →

  • Oral-In-person

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    Presenters

    • Swathi Chandrika

      • University of Chicago

    Authors

    • Swathi Chandrika

      • University of Chicago

    • Yeghishe Tsaturyan

      • University of Chicago

    • Marzieh Baan

    • Victor Yu

      • Argonne National Laboratory

    • Joseph Blanton

      • University of Chicago

    • Roberto Myers

      • Ohio State University

    • Michael Flatte

    • Giulia Galli

      • University of Chicago

    • Tyler Grassman

    • David Awschalom

      • University of Chicago

    View abstract →

  • Oral-In-person · Withdrawn

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    Publication: [1] Daniel R. Hart, David J. Spry, Adonay A. Sissay, Kaila N. Burgess, and Kenji Maeda, "Icing mitigation
    through quantum sensing," Proc. SPIE 12656, Spintronics XVI, 126560P (28 September 2023);
    https://doi.org/10.1117/12.2678336
    [2] Julia M. McCoey, Mirai Matsuoka, Robert W. de Gille, et al., "Quantum Magnetic Imaging of Iron Biomineralization
    in Teeth of the Chiton Acanthopleura hirtosa," Small Methods 4(3), 1900754 (2020).
    [3] Corey J. Cochrane, Jordana Blacksberg, Mark A. Anders, and Patrick M. Lenahan, "Vectorized magnetometer
    for space applications using electrical readout of atomic scale defects in silicon carbide," Sci. Rep. 6, 37077
    (2016).
    [4] Corey J. Cochrane, Hannes Kraus, Philip G. Neudeck, et al., "Magnetic Field Sensing with 4H SiC Diodes:
    N vs P Implantation," Mater. Sci. Forum 924, 988–992 (2018).
    [5] Stefania Castelletto and Alberto Boretti, "Silicon carbide color centers for quantum applications," J. Phys.:
    Photonics 2(2), 022001 (2020).
    [6] Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao, et al., "Entanglement and control of single
    nuclear spins in isotopically engineered silicon carbide," Nat. Mater. 19(12), 1319–1325 (2020).
    [7] David J. Christle, Abram L. Falk, Paolo Andrich, et al., "Isolated electron spins in silicon carbide with
    millisecond coherence times," Nat. Mater. 14(2), 160–163 (2015).
    [8] D. Riedel, F. Fuchs, H. Kraus, et al., "Resonant addressing and manipulation of silicon vacancy qubits in
    silicon carbide," Phys. Rev. Lett. 109(22), 226402 (2012).
    [9] S. G. Carter, ¨ O. O. Soykal, Pratibha Dev, Sophia E. Economou, and E. R. Glaser, "Spin coherence and echo
    modulation of the silicon vacancy in 4H-SiC at room temperature," Phys. Rev. B 92(16), 161202 (2015).
    [10] N. Mizuochi, S. Yamasaki, H. Takizawa, et al., "Continuous-wave and pulsed EPR study of the negatively
    charged silicon vacancy with S=3/2 and C3V symmetry in n-type 4H-SiC," Phys. Rev. B 66(23), 235202
    (2002).
    [11] Anasua Chatterjee, Paul Stevenson, Silvano De Franceschi, et al., "Semiconductor qubits in practice," Nat.
    Rev. Phys. 3(3), 157–177 (2021).
    [12] Adam J. Fallon, Daniel R. Hart, Evan J. Katz, Brian E. Vyhnalek, Ian A. Chin, and John D. Lekki, "Dual
    fiber spectrometer for highly non-degenerate entanglement source," Proc. SPIE 12446, Quantum Computing,
    Communication, and Simulation III, 124460X (8 March 2023);
    https://doi.org/10.1117/12.2650914
    [13] Alexander Lohrmann, Timothy James Karle, Vikas Kanayalal Sewani, et al., "Integration of single-photon
    emitters into 3C-SiC microdisk resonators," ACS Photonics 4(3), 462–468 (2017).
    [14] Bennett B. Goldberg, S. B. Ippolito, Lukas Novotny, Zhiheng Liu, and M. S. Unlu, "Immersion lens microscopy
    of photonic nanostructures and quantum dots," IEEE J. Sel. Top. Quantum Electron. 8(5),
    1051–1059 (2002).
    [15] A. Lohrmann, N. Iwamoto, Z. Bodrog, et al., "Single-photon emitting diode in silicon carbide," Nat. Commun.
    6, 7783 (2015).
    [16] Alexander Lohrmann, B. C. Johnson, J. C. McCallum, and Stefania Castelletto, "A review on single photon
    sources in silicon carbide," Rep. Prog. Phys. 80(3), 034502 (2017).
    [17] Brett C. Johnson, Judith W¨orle, Daniel Haasmann, et al., "Optically active defects at the SiC/SiO2 interface,"
    Phys. Rev. Applied 12(4), 044024 (2019).
    [18] M. A. Anders, P. M. Lenahan, and A. J. Lelis, "Multi-resonance frequency spin dependent charge pumping
    and spin dependent recombination—applied to the 4H-SiC/SiO2 interface," J. Appl. Phys. 122(23), 234503
    (2017).
    [19] Mark A. Anders, Patrick M. Lenahan, Nicholas J. Harmon, and Michael E. Flatt´e, "A technique to measure
    spin-dependent trapping events at the MOSFET interface: Near zero field spin-dependent charge pumping,"
    J. Appl. Phys. 128(24), 244501 (2020).
    [20] Schweiger, A. and Jeschke, G., Principles of Pulse Electron Paramagnetic Resonance, Oxford University
    Press, Oxford (2001).
    [21] L´epine, D. J., "Spin-dependent recombination on silicon surface," Phys. Rev. B 6, 436–441 (1972).
    [22] Kaplan, D., Solomon, I., and Mott, N. F., "Explanation of the large spin-dependent recombination effect in
    semiconductors," J. Phys. Lett. 39, L51–L54 (1978).
    [23] McCamey, D. R., Huebl, H., Brandt, M. S., Hutchison, W. D., McCallum, J. C., Clark, R. G., and Hamilton,
    A. R., "Electrically detected magnetic resonance in ion-implanted Si:P nanostructures," Appl. Phys. Lett.
    89, 182115 (2006).
    [24] Sgrignuoli, F., Viti, I., Yu, Z. G., Allridge, E., Lenahan, P., Goswami, S., Ghandi, R., Aghayan, M., and
    Shaddock, D. M., "All electrical near-zero field magnetoresistance magnetometry up to 500 °C using SiC
    devices," arXiv:2411.15196 (2025).
    [25] Soykal, O., Dev, P., and Economou, S. E., "Silicon vacancy center in 4H-SiC: Electronic structure and
    spin–photon interfaces," Phys. Rev. B 93, 081207 (2016).
    [26] Falk, A. L., Buckley, B. B., Calusine, G., Koehl, W. F., Dobrovitski, V. V., Politi, A., Zorman, C. A., Feng,
    P. X.-L., and Awschalom, D. D., "Polytype control of spin qubits in silicon carbide," Nat. Commun. 4, 1819
    (2013).
    [27] Niethammer, M., Widmann, M., Lee, S.-Y., Stenberg, P., Kordina, O., Ohshima, T., Son, N. T., Janz´en,
    E., and Wrachtrup, J., "Vector magnetometry using silicon vacancies in 4H-SiC under ambient conditions,"
    Phys. Rev. Applied 6, 034001 (2016).
    [28] Hansen, T. and Pedersen, N. L., "Spin-dependent recombination studied by steady-state stochastic Liouville
    theory," Chem. Phys. Lett. 363, 636–642 (2002).
    [29] Kuhn, H. W., "The Hungarian method for the assignment problem," Naval Research Logistics Quarterly
    2(1–2), 83–97 (1955).
    [30] C. J. Cochrane, Patrick M. Lenahan, and A. J. Lelis, "Identification of a silicon vacancy as an important
    defect in 4H-SiC MOSFETs using spin dependent recombination," Appl. Phys. Lett. 100(2), 023509 (2012).
    [31] W. J. Baker, K. Ambal, D. P.Waters, et al., "Robust absolute magnetometry with organic thin-film devices,"
    Nat. Commun. 3(1), 1–7 (2012).
    [32] Philippe Klemm, Sebastian Bange, Agnes P¨ollmann, Christoph Boehme, and John M. Lupton, "Nanotesla
    magnetoresistance in π-conjugated polymer devices," Phys. Rev. B 95(24), 241407 (2017).
    [33] F. L. Bloom, W. Wagemans, M. Kemerink, and B. Koopmans, "Correspondence of the sign change in organic
    magnetoresistance with the onset of bipolar charge transport," Appl. Phys. Lett. 93(26), 04449 (2008).
    [34] A. J. Schellekens, W. Wagemans, S. P. Kersten, P. A. Bobbert, and B. Koopmans, "Microscopic modeling
    of magnetic-field effects on charge transport in organic semiconductors," Phys. Rev. B 84(7), 075204 (2011).
    [35] Tho D. Nguyen, Golda Hukic-Markosian, FujianWang, et al., "Isotope effect in spin response of π-conjugated
    polymer films and devices," Nat. Mater. 9(4), 345–352 (2010).
    [36] C. J. Cochrane and Patrick M. Lenahan, "Zero-field detection of spin dependent recombination with direct
    observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field,"
    J. Appl. Phys. 112(12), 123714 (2012).

    Presenters

    • Daniel Hart

      • Southern University and A & M College

    Authors

    • Daniel Hart

      • Southern University and A & M College

    View abstract →

  • Oral-In-person

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    Publication: Xiong, Y., Zheng, J., McBride, S., Zhang, X., Griffin, S. M., & Hautier, G. (2024). Computationally driven discovery of T center-like quantum defects in silicon. Journal of the American Chemical Society, 146(44), 30046-30056.
    Xiong, Y., Bourgois, C., Sheremetyeva, N., Chen, W., Dahliah, D., Song, H., ... & Hautier, G. (2023). High-throughput identification of spin-photon interfaces in silicon. Science Advances, 9(40), eadh8617.

    Presenters

    • Yizhi Zhu

      • Rice University

    Authors

    • Yizhi Zhu

      • Rice University

    • Yihuang Xiong

      • Dartmouth College

    • Shay McBride

      • Dartmouth College

    • Hanbin Song

      • University of California, Berkeley

    • Xueyue (Sherry) Zhang

      • Caltech

    • Alp Sipahigil

      • University of California, Berkeley

    • Sinéad Griffin

      • Lawrence Berkeley National Laboratory

    • Geoffroy Hautier

      • Dartmouth College

    View abstract →

  • Oral-In-person

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    Presenters

    • Yuxi Jiang

      • University of Maryland College Park

    Authors

    • Yuxi Jiang

      • University of Maryland College Park

    • Amirehsan Alizadehherfati

      • Joint Quantum Institute

    • Christine Falter

    • Nils von den Driesch

    • Yurii Kutovyi

    • Alexander Pawlis

    • Edo Waks

      • University of Maryland, College Park

    View abstract →

  • Oral-In-person

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    Presenters

    • Ethan Hansen

      • University of Washington

    Authors

    • Ethan Hansen

      • University of Washington

    • Joe Falson

    • Yusuke Kozuka

      • National Institute for Materials Science

    • Masashi Kawasaki

      • RIKEN Center for Emergent Matter Science (CEMS), Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo

    • Kai-Mei Fu

      • University of Washington

    View abstract →

  • Oral-In-person · Withdrawn

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    Presenters

    • Vsevolod Ivanov

      • Virginia Tech

    Authors

    • Vsevolod Ivanov

      • Virginia Tech

    • Alexander Ivanov

      • Brown University

    • Pete Downey

      • Virginia Tech

    • Jacopo Simoni

      • University of Wisconsin Madison

    • Prabin Parajuli

      • Lawrence Berkeley National Laboratory

    • Boubacar Kante

      • University of California, Berkeley

    • Thomas Schenkel

      • University of California, Berkeley

    • Liang Tan

      • Lawrence Berkeley National Laboratory

    View abstract →