Excited State and Charge Dynamics of Single T Centers in Silicon

T centers in silicon are promising candidates for scalable quantum repeater nodes owing to their telecom-band photon emission and long spin lifetimes. Despite recent progress in understanding the interactions between T centers and their local charge environments, the electronic properties of the T center's excited-state manifold remain largely uncharacterized. We present an experimental platform for single-defect spectroscopy of device-integrated T centers under applied electric and magnetic fields. Using this platform, we probe the charge dynamics of the T center, including photo- and field-induced ionization through excited states and subsequent charge recapture. We outline the implications for improved control of T centers, such as prospects for higher readout fidelities through spin-to-charge conversion and field-tunable optical and electronic response.