Nonradiative carrier capture at deep acceptors in β-Ga₂O₃

β-Gallium Oxide (Ga₂O₃) is a promising ultra-wide-bandgap semiconductor with significant potential for power electronics. While n-type doping in β-Ga₂O₃ is well established, achieving highly resistive or insulating behavior for device isolation and leakage suppression is still an active research topic. This is typically accomplished through the incorporation of deep acceptor impurities, whose effectiveness depends not only on their transition levels in the bandgap but also on their carrier capture dynamics. In this work, we employ first-principles calculations to quantitatively investigate nonradiative carrier capture via the multiphonon emission process associated with deep acceptors in β-Ga₂O₃. This analysis provides microscopic insights into how deep traps affect carrier lifetimes, offering guidance for defect engineering strategies to optimize the performance of Ga₂O₃-based electronic devices.