Wide-Bandgap Materials and Defects

Presentations

• Frenkel Pairs and Recombination Barriers in GaN

  Oral-In-person

  March 16, 2026, 3:30 PM – March 16, 2026, 3:42 PM

  Presenters

  • Xichen Hu

    • University of California, Santa Barbara

  Authors

  • Xichen Hu

    • University of California, Santa Barbara

  • BaiQing Zhao

    • University of California, Santa Barbara

  • Chris Van de Walle

    • University of California, Santa Barbara

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• Tuning polytype selection during molecular beam epitaxy of GaN

  Oral-In-person

  March 16, 2026, 3:42 PM – March 16, 2026, 3:54 PM

  Presenters

  • Yury Turkulets

    • University of Michigan

  Authors

  • Yury Turkulets

    • University of Michigan

  • Catherine Huang

    • University of Michigan Ann Arbor

  • Jesus Herrera

  • Or Haim Chaulker

  • Ilan Shalish

  • Rachel Goldman

    • University of Michigan

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• Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

  Oral-In-person · Withdrawn

  March 16, 2026, 3:54 PM – March 16, 2026, 4:06 PM

  Presenters

  • Junjie Zhou

    • Fudan University

  Authors

  • Junjie Zhou

    • Fudan University

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• First-principles investigation of nonradiative carrier capture by defects in GaN

  Oral-In-person

  March 16, 2026, 4:06 PM – March 16, 2026, 4:18 PM

  Publication: Hauck, A. S., Jin, M., and Tuttle, B. R. Nonradiative carrier capture by defects in irradiated GaN. Planned paper.

  Presenters

  • Alexander Hauck

    • The Pennsylvania State University

  Authors

  • Alexander Hauck

    • The Pennsylvania State University

  • Blair Tuttle

    • Penn State University, Erie

  • Miaomiao Jin

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• Understanding the origin of defect-based single-photon emission in nitride materials

  Oral-In-person · Withdrawn

  March 16, 2026, 4:18 PM – March 16, 2026, 4:30 PM

  Presenters

  • Marco Govoni

    • University of Modena & Reggio Emilia

  Authors

  • Martino Silvetti

  • Andrea Biondini

  • Saifa Amin

  • Aidan Jimenez

  • Yifeng Cao

  • Jonathan Pelliciari

  • Gabriele Grosso

    • The Graduate Center, City University of New York

  • Marco Govoni

    • University of Modena & Reggio Emilia

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• Defect Engineering in Hexagonal Boron Nitride: Optical Properties of Stable Defect Complexes Arising from Boron Interstitials

  Oral-In-person

  March 16, 2026, 4:30 PM – March 16, 2026, 4:42 PM

  Publication: Cheng, N. L. Q.; Ulman, K. A.; Quek, S.Y., Defect Engineering in Hexagonal Boron Nitride: Optical Properties of Stable Defect Complexes Arising from Boron Interstitials, ACS Applied Materials and Interfaces, 2025, 17, 16, 24058-24070

  Presenters

  • Kanchan Ulman

    • Natl Univ of Singapore

  Authors

  • Nicholas Lin Quan Cheng

    • Natl Univ of Singapore

  • Kanchan Ulman

    • Natl Univ of Singapore

  • Su Ying Quek

    • Natl Univ of Singapore

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• Effects of ambient gases on quantum emitters in hexagonal boron nitride monolayers

  Oral-In-person

  March 16, 2026, 4:42 PM – March 16, 2026, 4:54 PM

  Presenters

  • Benjamin Edun

    • University of Maryland

  Authors

  • Benjamin Edun

    • University of Maryland

  • Pratibha Dev

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• Computational discovery of extreme-band-gap semiconductors.

  Invited-In-person · Invited

  March 16, 2026, 4:54 PM – March 16, 2026, 5:30 PM

  Publication: https://doi.org/10.48550/arXiv.2506.07284

  Presenters

  • Emmanouil Kioupakis

    • University of Michigan

  Authors

  • Emmanouil Kioupakis

    • University of Michigan

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• Defects and effects of high doping levels in CaSnO₃

  Oral-In-person

  March 16, 2026, 5:30 PM – March 16, 2026, 5:42 PM

  Presenters

  • Ramiro dos Santos

    • University of Delaware

  Authors

  • Ramiro dos Santos

    • University of Delaware

  • Vivian França

  • Anderson Janotti

    • University of Delaware

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• Nonradiative carrier capture at deep acceptors in β-Ga₂O₃

  Oral-In-person

  March 16, 2026, 5:42 PM – March 16, 2026, 5:54 PM

  Presenters

  • Yongjoong Shin

    • University of California, Santa Barbara

  Authors

  • Yongjoong Shin

    • University of California, Santa Barbara

  • Haochen Wang

    • University of California, Santa Barbara

  • Chris Van de Walle

    • University of California, Santa Barbara

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• Formation Kinetics and Charge Localization of Spin Defects in the Hexagonal Silicon Carbide

  Oral-In-person

  March 16, 2026, 5:54 PM – March 16, 2026, 6:06 PM

  Presenters

  • Sydney To

    • Univerisity of California Irvine

  Authors

  • Sydney To

    • Univerisity of California Irvine

  • Elizabeth Lee

    • University of California, Irvine

  • Nischala Pendyala

  • Alvin Yu

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• Point defects in SiC

  Oral-In-person

  March 16, 2026, 6:06 PM – March 16, 2026, 6:18 PM

  Presenters

  • Sadia Rahman Jhilik

    • University of Texas at Arlington

  Authors

  • Sadia Rahman Jhilik

    • University of Texas at Arlington

  • Muhammad N Huda

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• In-Situ Near Zero Field Magnetoresistance: A New Tool for Classifying Spin Dependent Defects Generated in Solid State Electronics During Particle Bombardment

  Oral-In-person

  March 16, 2026, 6:18 PM – March 16, 2026, 6:30 PM

  Presenters

  • Ashton Higgins

    • Penn State EES101

  Authors

  • Ashton Higgins

    • Penn State EES101

  • Patrick Lenahan

    • Pennsylvania State University

  • Edward Bielejec

    • Sandia National Laboratories

  • Dustin Hassenmayer

    • Pennsylvania State University

  • Kaila Burgess

  • George Bodenschatz

  • John Cain

  • Colin McKay

  • David Spry

  • Corey Cochrane

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