Integrated Flip-Chip Quantum-Dot Platform for Rapid Characterization of Semiconductor Qubit Materials

High‐fidelity multiqubit operations in semiconductor‐based, gated lateral quantum‐dot (QD) qubits are often limited by the intrinsic properties of the host material. Consequently, developing and optimizing semiconductor materials is essential, yet standard characterization techniques are time‐ and resource‐intensive and demand extensive fabrication. To overcome this bottleneck, we have designed a flip-chip QD platform that integrates much of the fabrication for gating and readout of lateral QDs onto a reusable gate chip, enabling rapid evaluation of arbitrary materials without resorting to material‐specific fabrication processes. Gating is achieved via a vacuum gap with a controlled separation under 100 nm (±22 nm), implemented through indium bump bonding and precision-grown hard-stop posts. We present experimental results from multiple devices fabricated using this technique and discuss our progress toward QD formation and dispersive gate readout via a superconducting resonator on the gate‐side flip chip.