High Volume Cryogenic Characterization of Advanced Si/SiGe Spin Qubit Devices

Building a fault-tolerant quantum computer requires a large number of physical qubits. Intel is delivering two-dimensional arrays with both front-end and back end process complexity comparable to leading edge CMOS processes. High volume characterization is critical to optimize the fabrication process and to achieve high yield for scalable, high performance spin qubit devices. In this talk we review measurement techniques used to characterize industry manufactured spin qubit devices with a 300 mm cryogenic wafer prober at 1.6 K. We present the latest high-volume data on Intel's spin qubit process, highlighting advancements in material innovations, and spin qubit component yield for scalable two-dimensional arrays with multiple backend layers. These results demonstrate key advancements in industrial-scale spin qubit characterization.