Imaging engineered electronic states in bilayer graphene with a nanopatterned gate (Part III)

Electrostatic confinement of electrons can be used to engineer custom energy levels, holding great promise for the exploration of interaction-driven phenomena. While quantum dots have been a traditional geometry for such confinement, more complex potential landscapes open new avenues for quantum simulation, band structure engineering, and the controlled study of electron-electron interactions. Such structures have posed significant challenges in both fabrication and characterization with local probes. In this final talk in a series of presentations, I will expand our scanning tunneling microscopy (STM) setup for studying bilayer graphene quantum dots to investigate bilayer graphene devices shaped by engineered patterned gates. Device tunability and spectroscopic imaging results demonstrate STM as a powerful tool for nanoscale imaging of graphene devices with patterned gates, an infinitely versatile and beyond-zero-dimensional platform.