Initial characterization of devices to probe interfacial conductance at ν = 5/2

The ν = 5/2 fractional quantum Hall state is expected to be characterized by non-Abelian braiding statistics. Identification of the underlying topological order in real two-dimensional systems remains an outstanding challenge. The topological order can be probed through interfacial conductance measurements [1,2]. The heterostructure must be extremely low disorder and support stable gating to interface a robust ν = 5/2 quantum Hall state with other states including ν = 8/3 and ν = 7/3. We discuss the details of high-quality AlGaAs/GaAs heterostructures that achieve these requirements and exhibit high quality transport without illumination. We detail the fabrication process of the multi-layered gate design used to interface different filling fractions at fixed magnetic field. We present the initial characterization of these devices and describe their operation.