Ultra Wide Band Gap I
FOCUS · MAR-Y26 · ID: MAR-Y26
Presentations
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2DEGs and FETs based on perovskite oxide semiconductors and dielectrics
Invited-In-person · Invited
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Presenters
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Kookrin Char
- Seoul Natl Univ
Authors
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Kookrin Char
- Seoul Natl Univ
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Band alignment and band offsets between (Al, Ga, In)BO<sub>3</sub> ultra wide bandgap materials
Oral-In-person
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Presenters
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Krishna Acharya
- Colorado School of Mines
Authors
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Krishna Acharya
- Colorado School of Mines
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Brooks Tellekamp
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Vladan Stevanovic
- Colorado School of Mines
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Band Alignment and Interface Electronic Structure of Al₂O₃ Deposited on H-Terminated Boron and Phosphorous Doped Diamond
Oral-In-person
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Presenters
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Md Sahadat Alam
- Arizona State University
Authors
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Md Sahadat Alam
- Arizona State University
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Parker Steenblik
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Kevin Hatch
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Franz Koeck
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Robert Nemanich
- Arizona State University
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Photovoltaic Performance of p-type Dye-Sensitised Solar Cells Based on Solid and Flexible Electrode Systems
Oral-In-person · Withdrawn
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Publication: https://doi.org/10.1021/acsami.0c02413
Presenters
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Habtamu Etefa
- Walter Sisulu University
Authors
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Habtamu Etefa
- Walter Sisulu University
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Influence of Surface passivation on Band alignment and Exciton binding energy in monolayer-BN/Diamond Heterostructures
Oral-In-person
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Presenters
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Kelotchi Figueroa Nieves
- University of Michigan
Authors
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Kelotchi Figueroa Nieves
- University of Michigan
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Xiao Zhang
- University of Michigan
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Emmanouil Kioupakis
- University of Michigan
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Parag Deotare
- University of Michigan
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Temperature Dependent and Self Heating Characteristics of Pseudo Vertical AlN Diodes on Bulk AlN Substrates
Oral-In-person
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Publication: Quasi-vertical Ni-AlN Schottky Diode and Its Temperature-dependent Characteristics
Presenters
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Md Abdul Hamid
- Arizona State University
Authors
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Md Abdul Hamid
- Arizona State University
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Twish Sanghvi
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Noor Jahan Nipu
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Uttam Singisetti
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Nidhin Kurian Kalarickal
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Investigation of semiconducting properties in epitaxial AlN film and single crystal
Oral-In-person · Withdrawn
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Presenters
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Do Hyun Kim
Authors
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Yoon Seok Oh
- Ulsan Natl Inst of Sci & Tech
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Do Hyun Kim
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Nimphy Sarkar
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Da Hyung Kim
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Seon Namgung
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Taenam Kwon
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Kunook Chung
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Seung-Hyub Baek
- Korea Institute of Science and Technology
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Tae Heon Kim
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Theoretical Characterization of Rutile GeₓSn₁₋ₓO₂ Alloys as Ultra-wide Bandgap Semiconductors
Oral-In-person
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Presenters
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Alp Kurbay
- University of Michigan
Authors
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Alp Kurbay
- University of Michigan
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Xiao Zhang
- University of Michigan
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Yann Müller
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Anirudh Natarajan
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Emmanouil Kioupakis
- University of Michigan
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Hot-carrier-induced dissociation of hydrogen-defect complexes in GaN and AlN
Oral-In-person
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Presenters
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Yunfan Liang
- University of California, Santa Barbara
Authors
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Yunfan Liang
- University of California, Santa Barbara
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Woncheol Lee
- University of Michigan
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Chris Van de Walle
- University of California, Santa Barbara
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Band Alignments and Polarization Effects in III-V Nitride Heterojunctions
Oral-In-person
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Publication: (in preparation) Akash Ram, S-H Yoo, C. G. Van de Walle, Band Alignments at Polar Nitride Heterojunctions
Presenters
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Akash Ram
- University of California Santa Barbara
Authors
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Akash Ram
- University of California Santa Barbara
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Su-Hyun Yoo
- Korea Research Institute of Chemical Technology
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Chris Van de Walle
- University of California, Santa Barbara
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Atomic-scale statistical analysis of interface structure and stability in Ga<sub>2</sub>O<sub>3</sub>-based power electronic devices
Oral-In-person
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Presenters
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Michelle Smeaton
- National Renewable Energy Laboratory (NREL)
Authors
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Michelle Smeaton
- National Renewable Energy Laboratory (NREL)
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Madeline Hoffmann
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Ravi Lin
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Anna Sacchi
- National Renewable Energy Laboratory
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Renae Gannon
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Brooks Tellekamp
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Andriy Zakutayev
- National Renewable Energy Laboratory (NREL)
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Steven Spurgeon
- National Renewable Energy Laboratory (NREL)
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Strain effects on doping in AlN and GaN
Oral-In-person
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Presenters
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Haochen Wang
- University of California, Santa Barbara
Authors
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Haochen Wang
- University of California, Santa Barbara
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Chris Van de Walle
- University of California, Santa Barbara
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Computational spectroscopy for point defects in AlN and AlGaN
Oral-In-person
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Publication: [1] D. Wickramaratne, M. Siford, M. S. I. Mollik, J. L. Lyons, and M. E. Zvanut, "Direct evidence for carbon incorporation on the nitrogen site in AlN," Physical Review Materials, vol. 8, no. 9. American Physical Society (APS), Sep. 11, 2024. doi: 10.1103/physrevmaterials.8.094602.
[2] J. Forbus, D. Wickramaratne, J. L. Lyons, and M. E. Zvanut, "Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for DX-center formation," Applied Physics Letters, vol. 126, no. 4. AIP Publishing, Jan. 27, 2025. doi: 10.1063/5.0249701Presenters
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Darshana Wickramaratne
- United States Naval Research Laboratory
Authors
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Darshana Wickramaratne
- United States Naval Research Laboratory
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John Lyons
- United States Naval Research Laboratory
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Mackenzie Siford
- University of Alabama at Birmingham
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Md Shafiqul Islam Mollik
- University of Alabama at Birmingham, AL, USA
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Jason Forbus
- University of Alabama
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Mary Ellen Zvanut
- University of Alabama at Birmingham
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