Ultra Wide Band Gap I

Presentations

• 2DEGs and FETs based on perovskite oxide semiconductors and dielectrics

  ORAL · Invited

  March 20, 2026, 8:00 AM – March 20, 2026, 8:36 AM

  Presenters

  • Kookrin Char

    • Seoul Natl Univ

  Authors

  • Kookrin Char

    • Seoul Natl Univ

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• Band alignment and band offsets between (Al, Ga, In)BO₃ ultra wide bandgap materials

  ORAL

  March 20, 2026, 8:36 AM – March 20, 2026, 8:48 AM

  Presenters

  • Krishna Acharya

    • Colorado School of Mines

  Authors

  • Krishna Acharya

    • Colorado School of Mines

  • Brooks B Tellekamp

    • National Renewable Energy Laboratory (NREL)
    • National Renewable Energy Laboratory

  • Vladan Stevanovic

    • Colorado School of Mines

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• Band Alignment and Interface Electronic Structure of Al₂O₃ Deposited on H-Terminated Boron and Phosphorous Doped Diamond

  ORAL

  March 20, 2026, 8:48 AM – March 20, 2026, 9:00 AM

  Presenters

  • Md Sahadat Alam

    • Arizona State University

  Authors

  • Md Sahadat Alam

    • Arizona State University

  • Parker Steenblik

    • Arizona State University

  • Kevin Hatch

    • Arizona State University

  • Franz Koeck

    • Arizona State University

  • Robert Nemanich

    • Arizona State University

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• Abstract Withdrawn

  ORAL · Withdrawn

  March 20, 2026, 9:00 AM – March 20, 2026, 9:12 AM

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• Influence of Surface passivation on Band alignment and Exciton binding energy in monolayer-BN/Diamond Heterostructures

  ORAL

  March 20, 2026, 9:12 AM – March 20, 2026, 9:24 AM

  Presenters

  • Kelotchi Sebastian Figueroa Nieves

    • University of Michigan

  Authors

  • Kelotchi Sebastian Figueroa Nieves

    • University of Michigan

  • Xiao Zhang

    • University of Michigan
    • University of Michigan Ann Arbor

  • Emmanouil Kioupakis

    • University of Michigan

  • Parag Deotare

    • University of Michigan

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• Temperature Dependent and Self Heating Characteristics of Pseudo Vertical AlN Diodes on Bulk AlN Substrates

  ORAL

  March 20, 2026, 9:24 AM – March 20, 2026, 9:36 AM

  Publication: Quasi-vertical Ni-AlN Schottky Diode and Its Temperature-dependent Characteristics

  Presenters

  • Md Abdul Hamid

    • Arizona State University

  Authors

  • Md Abdul Hamid

    • Arizona State University

  • Twish Sanghvi

    • Arizona State University

  • Noor Jahan Nipu

    • University at Buffalo

  • Uttam Singisetti

    • University at Buffalo
    • State Univ of NY -Buffalo
    • State University of New York at Buffalo

  • Nidhin Kurian Kalarickal

    • Arizona State University

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• Abstract Withdrawn

  ORAL · Withdrawn

  March 20, 2026, 9:36 AM – March 20, 2026, 9:48 AM

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• Theoretical Characterization of Rutile GeₓSn₁₋ₓO₂ Alloys as Ultra-wide Bandgap Semiconductors

  ORAL

  March 20, 2026, 9:48 AM – March 20, 2026, 10:00 AM

  Presenters

  • Alp U Kurbay

    • University of Michigan

  Authors

  • Alp U Kurbay

    • University of Michigan

  • Xiao Zhang

    • University of Michigan
    • University of Michigan Ann Arbor

  • Yann L Müller

    • Ecole Polytechnique Federale de Lausanne

  • Anirudh R Natarajan

    • Ecole Polytechnique Federale de Lausanne

  • Emmanouil Kioupakis

    • University of Michigan

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• Hot-carrier-induced dissociation of hydrogen-defect complexes in GaN and AlN 

  ORAL

  March 20, 2026, 10:00 AM – March 20, 2026, 10:12 AM

  Presenters

  • Yunfan Liang

    • University of California, Santa Barbara

  Authors

  • Yunfan Liang

    • University of California, Santa Barbara

  • Woncheol Lee

    • University of California, Santa Barbara

  • Chris G Van de Walle

    • University of California, Santa Barbara

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• Band Alignments and Polarization Effects in III-V Nitride Heterojunctions

  ORAL

  March 20, 2026, 10:12 AM – March 20, 2026, 10:24 AM

  Publication: (in preparation) Akash Ram, S-H Yoo, C. G. Van de Walle, Band Alignments at Polar Nitride Heterojunctions

  Presenters

  • Akash Ram

    • University of California Santa Barbara

  Authors

  • Akash Ram

    • University of California Santa Barbara

  • Su-Hyun Yoo

    • Korea Research Institute of Chemical Technology

  • Chris G Van de Walle

    • University of California, Santa Barbara

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• Atomic-scale statistical analysis of interface structure and stability in Ga₂O₃-based power electronic devices

  ORAL

  March 20, 2026, 10:24 AM – March 20, 2026, 10:36 AM

  Presenters

  • Michelle A Smeaton

    • National Renewable Energy Laboratory (NREL)

  Authors

  • Michelle A Smeaton

    • National Renewable Energy Laboratory (NREL)

  • Madeline Hoffmann

    • National Renewable Energy Laboratory (NREL)

  • Ravi Lin

    • National Renewable Energy Laboratory (NREL)

  • Anna Sacchi

    • National Renewable Energy Laboratory (NREL)
    • National Renewable Energy Laboratory

  • Renae Gannon

    • National Renewable Energy Laboratory (NREL)

  • Brooks B Tellekamp

    • National Renewable Energy Laboratory (NREL)
    • National Renewable Energy Laboratory

  • Andriy Zakutayev

    • National Renewable Energy Laboratory (NREL)

  • Steven R Spurgeon

    • National Renewable Energy Laboratory (NREL); Metallurgical and Materials Engineering Department, Colorado School of Mines; Renewable and Sustainable Energy Institute (RASEI)
    • National Renewable Energy Laboratory (NREL)

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• Strain effects on doping in AlN and GaN

  ORAL

  March 20, 2026, 10:36 AM – March 20, 2026, 10:48 AM

  Presenters

  • Haochen Wang

    • University of California, Santa Barbara

  Authors

  • Haochen Wang

    • University of California, Santa Barbara

  • Chris G Van de Walle

    • University of California, Santa Barbara

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• Computational spectroscopy for point defects in AlN and AlGaN

  ORAL

  March 20, 2026, 10:48 AM – March 20, 2026, 11:00 AM

  Publication: [1] D. Wickramaratne, M. Siford, M. S. I. Mollik, J. L. Lyons, and M. E. Zvanut, "Direct evidence for carbon incorporation on the nitrogen site in AlN," Physical Review Materials, vol. 8, no. 9. American Physical Society (APS), Sep. 11, 2024. doi: 10.1103/physrevmaterials.8.094602.
  
  [2] J. Forbus, D. Wickramaratne, J. L. Lyons, and M. E. Zvanut, "Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for DX-center formation," Applied Physics Letters, vol. 126, no. 4. AIP Publishing, Jan. 27, 2025. doi: 10.1063/5.0249701

  Presenters

  • Darshana Wickramaratne

    • United States Naval Research Laboratory

  Authors

  • Darshana Wickramaratne

    • United States Naval Research Laboratory

  • John L Lyons

    • United States Naval Research Laboratory

  • Mackenzie Siford

    • University of Alabama at Birmingham

  • Md Shafiqul Islam Mollik

    • University of Alabama at Birmingham, AL, USA

  • Jason I Forbus

    • University of Alabama

  • Mary Ellen Zvanut

    • University of Alabama at Birmingham

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