Ultra Wide Band Gap II

Presentations

• Chimeric states of matter: Meissner effect without superconductivity

  Invited-In-person · Invited

  March 20, 2026, 12:00 PM – March 20, 2026, 12:36 PM

  Publication: "Chimeric states of matter: Meissner effect without superconductivity," Michael J Landry and Mingda Li (to be submitted for publication soon)

  Presenters

  • Michael Landry

    • Massachusetts Institute of Technology

  Authors

  • Michael Landry

    • Massachusetts Institute of Technology

  • Mingda Li

    • Massachusetts Institute of Technology

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• Tuning Oxygen Vacancy Dynamics in Al₂O₃ Memristors via Mg and Zn Doping

  Oral-In-person

  March 20, 2026, 12:36 PM – March 20, 2026, 12:48 PM

  Presenters

  • YASHASSRI RAJIND BALASOORIYA GALGAMU ARACHCHILLAGE

    • University of Kansas

  Authors

  • YASHASSRI RAJIND BALASOORIYA GALGAMU ARACHCHILLAGE

    • University of Kansas

  • Hartwin Peelaers

    • University of Kansas

  View abstract →

• Computational model of heterostructural TaC/AlGaN Schottky diodes

  Oral-In-person

  March 20, 2026, 12:48 PM – March 20, 2026, 1:00 PM

  Publication: [1] S. Mahatara and S. Lany, Phys. Rev. Appl. 22, 054044 (2024), https://doi.org/10.1103/PhysRevApplied.22.054044

  Presenters

  • Stephan Lany

    • National Renewable Energy Laboratory (NREL)

  Authors

  • Sharad Mahatara

    • National Renewable Energy Laboratory

  • MVS Chandrashekhar

  • Stephan Lany

    • National Renewable Energy Laboratory (NREL)

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• Deep-Ultraviolet Transient Grating Probes of Wide Bandgap Materials in a Reflective Heterodyne Geometry

  Oral-In-person

  March 20, 2026, 1:00 PM – March 20, 2026, 1:12 PM

  Publication: E. E. Nelson et al, Phys. Rev. Applied 22, 054007 (2024)

  Presenters

  • Yunhao Li

    • University of Colorado, Boulder

  Authors

  • Yunhao Li

    • University of Colorado, Boulder

  • Theodore Culman

    • National Institute of Standards and Technology (NIST)

  • Jiayi Liu

    • JILA

  • Emma Nelson

    • University of Colorado, Boulder

  • Albert Beardo

    • Autonomous University of Barcelona

  • Joshua Knobloch

    • JILA

  • Brendan McBennett

    • JILA

  • Henry Kapteyn

    • University of Colorado, Boulder

  • Margaret Murnane

    • JILA

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• High-throughput discovery of high-entropy ferroelectric semiconductor alloys

  Oral-In-person

  March 20, 2026, 1:12 PM – March 20, 2026, 1:24 PM

  Presenters

  • Yujie Liu

    • University of Michigan

  Authors

  • Yujie Liu

    • University of Michigan

  • Emmanouil Kioupakis

    • University of Michigan

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• Alkali doping of zinc magnesium oxide alloys for p-type conductivity

  Oral-In-person

  March 20, 2026, 1:24 PM – March 20, 2026, 1:36 PM

  Presenters

  • John Lyons

    • United States Naval Research Laboratory

  Authors

  • John Lyons

    • United States Naval Research Laboratory

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• 2D materials Enhance Thermal Conductance at van der Waals Interfaces of β-Ga₂O₃

  Oral-In-person

  March 20, 2026, 1:36 PM – March 20, 2026, 1:48 PM

  Presenters

  • Sylvester Makumi

    • University of Utah

  Authors

  • Sylvester Makumi

    • University of Utah

  • Aidan Belanger

    • University of Utah

  • Zlatan Aksamija

    • University of Utah

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• Phase transformation in BN/diamond heterojunctions using machine-learned force fields

  Oral-In-person

  March 20, 2026, 1:48 PM – March 20, 2026, 2:00 PM

  Publication: CL Milne, H Gomez, A Gupta, AG Birdwell, S Rudin, EJ Garratt, BB Pate, TG Ivanov, AK Singh, and MR Neupane. "Interface Structure and Electronic Properties in Cubic Boron Nitride - Diamond Heterostructures." Under review in Materials Today Physics.
  
  CL Milne, MR Neupane, AK Singh. Phase transformation in BN/diamond heterojunctions using machine-learned force fields. (planned)

  Presenters

  • Cody Milne

    • Arizona State University

  Authors

  • Cody Milne

    • Arizona State University

  • Alejandro Barraza-Valdez

  • Mahesh Neupane

    • US Army Research Lab Adelphi

  • Arunima Singh

    • Arizona State University

  View abstract →

• Stability and interlayer formation at epitaxial p-type oxides/Ga₂O₃ interfaces

  Oral-In-person

  March 20, 2026, 2:00 PM – March 20, 2026, 2:12 PM

  Publication: (1) Kokubun, Y.; Kubo, S.; Nakagomi, S. All-Oxide p–n Heterojunction Diodes Comprising p-Type NiO and n-Type β-Ga2O3. Appl. Phys. Express 2016, 9 (9), 091101. https://doi.org/10.7567/APEX.9.091101.
  (2) Callahan, W. A.; Egbo, K.; Lee, C.-W.; Ginley, D.; O'Hayre, R.; Zakutayev, A. Reliable Operation of Cr2O3:Mg/ β-Ga2O3 p–n Heterojunction Diodes at 600 °C. Appl. Phys. Lett. 2024, 124 (15), 153504. https://doi.org/10.1063/5.0185566.

  Presenters

  • Anna Sacchi

    • National Renewable Energy Laboratory

  Authors

  • Anna Sacchi

    • National Renewable Energy Laboratory

  • Michelle Smeaton

    • National Renewable Energy Laboratory (NREL)

  • Steven Spurgeon

    • National Renewable Energy Laboratory (NREL)

  • Shivashree Shivamade Gowda

  • Patrick Hopkins

    • Univ of Virginia

  • Brooks Tellekamp

  • Andriy Zakutayev

    • National Renewable Energy Laboratory (NREL)

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• First-principles study of lattice dynamics in Mg-IV-N₂ semiconductors

  Oral-In-person

  March 20, 2026, 2:12 PM – March 20, 2026, 2:24 PM

  Presenters

  • Sarker Md. Sadman

    • Case Western Reserve University

  Authors

  • Sarker Md. Sadman

    • Case Western Reserve University

  • Walter R Lambrecht

    • Case Western Reserve University

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• Band-to-band transitions, and ultraviolet dielectric functions of unintentionally-doped (x = 0 . . . 0.3) and Silicon doped (x = 0 . . . 0.25) single crystal (100) β-(Al_xGa_1−x)₂O₃

  Oral-In-person

  March 20, 2026, 2:24 PM – March 20, 2026, 2:36 PM

  Publication: [1] Z. Galazka, et al., J. Appl. Phys. 133, 037502 (2023).
  [2] M. Schubert, et al., Phys. Rev. B 93, 125209 (2016).
  [3] M. Schubert, et al., Phys. Rev. B 99, 041201(R) (2019).
  [4] R. Korlacki, et al., Phys. Rev. B 102, 180101(R) (2020).
  [5] R. Korlacki, et al., Phys. Rev. Applied 18, 064019 (2022).
  [6] M. Stokey, R. Korlacki, et al., In Preparation.
  [7] M. Hilfiker, et al., Appl. Phys. Lett. 114, 231901 (2019).

  Presenters

  • Preston Sorensen

    • University of Nebraska-Lincoln

  Authors

  • Preston Sorensen

    • University of Nebraska-Lincoln

  • UFUK KILIC

    • University of Nebraska - Lincoln

  • Megan Stokey

  • Rafal Korlacki

    • J.A. Woollam Co, Inc.

  • Vallery Stanishev

  • Vanya Darakchieva

    • Lund University

  • Zbigniew Galazka

  • Mathias Schubert

    • University of Nebraska-Lincoln

  View abstract →

• The strain-stress relationships for coherent in-plane strain in heterostructures with monoclinic crystal systems: β-(AlxGa1-x)2O3 on (h0l) β-Ga2O3 as example

  Oral-In-person

  March 20, 2026, 2:36 PM – March 20, 2026, 2:48 PM

  Publication: DOI: https://doi.org/10.1103/5gx2-kn6m;
  https://doi.org/10.48550/arXiv.2405.16307

  Presenters

  • Yousra Traouli

    • University of Nebraska - Lincoln

  Authors

  • Yousra Traouli

    • University of Nebraska - Lincoln

  • Mathias Schubert

    • University of Nebraska-Lincoln

  • Rafal Korlacki

    • J.A. Woollam Co, Inc.

  • Sina Khayam

    • UNIVERSITY OF NEBRASKA-LINCOLN

  • Preston Sorensen

    • University of Nebraska-Lincoln

  • Alexis Papamichail

  • Vanya Darakchieva

    • Lund University

  View abstract →

• Hole trapping and acceptor dopants in κ-Ga₂O₃

  Oral-In-person

  March 20, 2026, 2:48 PM – March 20, 2026, 3:00 PM

  Publication: https://doi.org/10.48550/arXiv.2504.07443

  Presenters

  • Eric Welch

    • Prairie View A&M University

  Authors

  • Eric Welch

    • Prairie View A&M University

  • Nathan Martins

  • Luisa Scolfaro

    • Texas State University

  • Luiz Viana

  • Pablo Borges

  View abstract →